NVMFS5C442NWFET1G

$2.37

Description：T6-40V N 2.3 MOHMS SL
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1bd90e1db526 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NVMFS5C442NWFET1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is T6-40V N 2.3 MOHMS SL. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVMFS5C442NWFET1G

Description：T6-40V N 2.3 MOHMS SL
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：29A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 83W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：5-DFN (5x6) (8-SOFL)
Package / Case：8-PowerTDFN, 5 Leads

Single FETs, MOSFETs datasheet and documents for NVMFS5C442NWFET1G

NVMFS5C442NWFET1G

Single FETs, MOSFETs Overview

The NVMFS5C442NWFET1G is a single N-channel power MOSFET manufactured by onsemi, housed in a DFNW5 (DFNW5) surface-mount package. It features a drain-to-source voltage of 40 V and a continuous drain current rating of 140 A at TC = 25 °C. The device exhibits a maximum on-resistance of 2.3 mΩ at VGS = 10 V and ID = 50 A. Key electrical parameters include a total gate charge of 32 nC, an input capacitance of 2100 pF, and a forward transconductance of 92 S. It supports a pulsed drain current of 900 A and operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Small footprint design for compact applications
Low on-resistance to minimize conduction losses
Low gate charge and capacitance to reduce driver losses
Wettable flank option for enhanced optical inspection

Single FETs, MOSFETs Applications

Automotive electronics requiring AEC-Q101 qualification
Power management systems prioritizing efficiency
Switching circuits with space constraints

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'WF' indicates the inclusion of wettable flanks for improved solder joint visibility during automated optical inspection. Confirm that the 'E' suffix corresponds to the specific tape and reel packaging configuration required for your assembly line equipment. Ensure compliance with RoHS standards and lead-free manufacturing processes as specified in the ordering information section of the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile N-channel MOSFET with high current handling capability is needed. The DFNW5 package provides thermal performance suitable for steady-state operation up to 140 A at 25 °C case temperature. Consider the 2.3 mΩ maximum RDS(on) for minimizing power dissipation in high-efficiency designs. Verify that the 40 V breakdown voltage aligns with the system's maximum operating voltage requirements.

Single FETs, MOSFETs Part Context

This part belongs to the NVMFS5C442N series from onsemi, designed for high-performance switching applications. The series utilizes silicon technology and offers various packaging options including standard DFN5 and the DFNW5 variant with wettable flanks. It is engineered to meet automotive reliability standards through AEC-Q101 qualification and PPAP capability, ensuring suitability for demanding environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include NVMFS5C442NWFT1G and NVMFS5C442NAFT1G. These parts share identical electrical characteristics but may differ in packaging or shipping configurations. Verify pinout compatibility and thermal resistance values before substitution to ensure equivalent performance in the target application.