Single Bipolar Transistors PBHV8110DA_R1_00001 product image

PBHV8110DA_R1_00001

$0.31
  • Description:TRANS NPN 100V 1A SOT-23
  • Series:-

SKU:af0649a1a3d9 Category: Brand:

  
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PBHV8110DA_R1_00001 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is TRANS NPN 100V 1A SOT-23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PBHV8110DA_R1_00001

  • Description:TRANS NPN 100V 1A SOT-23
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 150mA, 2V
  • Power - Max:1.25 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for PBHV8110DA_R1_00001

PBHV8110DA_R1_00001

Single Bipolar Transistors Overview

The PBHV8110DA is a silicon NPN epitaxial transistor in an SOT-23 package. It supports a collector current of 1 A and withstands voltages of 100 V (VCEO) and 120 V (VCBO). The device features a low saturation voltage of 0.35 V maximum at Ic/Ib=500mA/50mA, with a transition frequency of 100 MHz. Power dissipation reaches 1.25 W, operating between -55°C and +150°C.

Single Bipolar Transistors Feature Summary

  • Low saturation voltage for efficient switching
  • High DC current gain characteristics
  • Lead-free construction compliant with EU RoHS 2.0

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Driver applications requiring high collector current
  • Complementary pairing with PNP PBHV9110DA

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging details. Confirm that the component meets required environmental standards such as IEC61249 green molding compound specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low Vce(sat) is critical for minimizing conduction losses. Ensure the design accommodates the 1 A continuous collector current limit and verify thermal management capabilities for the SOT-23 package under expected load conditions.

Single Bipolar Transistors Part Context

This part belongs to Panjit's low Vce(sat) transistor series designed for general-purpose applications. It serves as the NPN counterpart to the PBHV9110DA PNP transistor, allowing for complementary push-pull configurations in driver stages and power management circuits.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the PBHV9110DA as the direct PNP complement. Verify pinout compatibility and electrical symmetry if substituting within a complementary pair configuration.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) is 120 V.

Is the device lead-free?

Yes, the device is lead-free and complies with EU RoHS 2.0 standards.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from 100 to 300 at VCE=5V and IC=500mA.

PBHV8110DA_R1_00001PBHV8110DA_R1_00001
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