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PBHV8110DA_R1_00001 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is TRANS NPN 100V 1A SOT-23. Review the specifications below when checking this part for your BOM.
The PBHV8110DA is a silicon NPN epitaxial transistor in an SOT-23 package. It supports a collector current of 1 A and withstands voltages of 100 V (VCEO) and 120 V (VCBO). The device features a low saturation voltage of 0.35 V maximum at Ic/Ib=500mA/50mA, with a transition frequency of 100 MHz. Power dissipation reaches 1.25 W, operating between -55°C and +150°C.
Verify the specific ordering suffix against official Panjit documentation to confirm packaging details. Confirm that the component meets required environmental standards such as IEC61249 green molding compound specifications before finalizing procurement orders.
Select this component when a low Vce(sat) is critical for minimizing conduction losses. Ensure the design accommodates the 1 A continuous collector current limit and verify thermal management capabilities for the SOT-23 package under expected load conditions.
This part belongs to Panjit's low Vce(sat) transistor series designed for general-purpose applications. It serves as the NPN counterpart to the PBHV9110DA PNP transistor, allowing for complementary push-pull configurations in driver stages and power management circuits.
The datasheet identifies the PBHV9110DA as the direct PNP complement. Verify pinout compatibility and electrical symmetry if substituting within a complementary pair configuration.
The maximum collector-base voltage (VCBO) is 120 V.
Yes, the device is lead-free and complies with EU RoHS 2.0 standards.
The DC current gain (hFE) ranges from 100 to 300 at VCE=5V and IC=500mA.
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