PBHV8110DH_R1_00001

$0.34

Description：TRANS NPN 100V 1A SOT-89
Series：-

SKU:faaa8ba67ffc Category: Single Bipolar Transistors Brand: Panjit International Inc.

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Product introduction

PBHV8110DH_R1_00001 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is TRANS NPN 100V 1A SOT-89. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PBHV8110DH_R1_00001

Description：TRANS NPN 100V 1A SOT-89
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：450mV @ 100mA, 1A
Current - Collector Cutoff (Max)：500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：140 @ 150mA, 2V
Power - Max：1.4 W
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for PBHV8110DH_R1_00001

PBHV8110DH_R1_00001

Single Bipolar Transistors Overview

The PBHV8110DH_R1_00001 is a silicon NPN epitaxial low Vce(sat) transistor manufactured by Panjit International Inc. It utilizes an SOT-89 surface-mount package and supports a maximum collector current of 1 A with a peak pulse current of 3 A. The device features a collector-emitter voltage rating of 100 V and a collector-base voltage of 120 V. Power dissipation is rated at 1.4 W, with a thermal resistance from junction to ambient of 89 °C/W. The component operates within a temperature range of -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

Low saturation voltage (Vce(sat)) of 0.35 V maximum at Ic/Ib = 500mA / 50mA
High collector current capability for robust switching performance
Excellent DC current gain characteristics across operating ranges
Lead-free construction compliant with EU RoHS 2.0 standards

Single Bipolar Transistors Applications

General purpose switching applications
Driver circuits requiring high collector current
Power management modules utilizing standard SMD footprints

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging details and marking codes. Ensure compatibility with SOT-89 footprint requirements during PCB layout. Confirm compliance with environmental directives such as RoHS 2.0 if required for your manufacturing process. Cross-reference datasheet revision dates to ensure electrical parameters match your design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a low saturation voltage is critical for efficiency in switching applications. The SOT-89 package provides higher power handling compared to smaller SMD packages while maintaining a compact profile. Consider the 100 V collector-emitter voltage rating for medium-voltage circuits. Verify that the thermal resistance allows for adequate heat dissipation within the target enclosure constraints.

Single Bipolar Transistors Part Context

This part belongs to the PBHV series of low Vce(sat) transistors designed for efficient switching. The manufacturer offers a PNP complement, the PBHV9110DH, for complementary push-pull configurations. The series emphasizes high current capability and excellent gain characteristics suitable for general-purpose electronic designs.

Single Bipolar Transistors Replacement Considerations

The PBHV9110DH serves as the PNP complement within the same product family. Direct pin-compatible replacements should be verified against the SOT-89 package dimensions and electrical ratings provided in the datasheet.