PBSS302ND-QX

Single Bipolar Transistors Overview

The PBSS302ND-Q is an NPN low VCEsat transistor housed in a SOT457 (SC-74) TSOP6 surface-mounted plastic package. It supports a collector-emitter voltage of 40 V and continuous collector current of 4 A, with peak current capability up to 15 A. The device features ultra-low collector-emitter saturation resistance, typically 55 mΩ at 6 A collector current and 600 mA base current. Qualified under AEC-Q101 standards, it is designed for automotive applications requiring high efficiency and reduced heat generation.

Single Bipolar Transistors Feature Summary

• Ultra-low collector-emitter saturation voltage and resistance for high efficiency
• AEC-Q101 qualified for automotive reliability
• High continuous collector current capability

Single Bipolar Transistors Applications

• Power management functions
• Charging circuits
• DC-to-DC conversion
• MOSFET gate driving
• TFT backlight inverters

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Cross-reference the marking code C7 with the datasheet to ensure authenticity upon receipt.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring low saturation voltage to minimize power loss and thermal output. Ensure the base drive current is sufficient to maintain the low RCEsat characteristics specified in the data sheet. Consider the SOT457 package dimensions for PCB layout constraints and verify thermal dissipation requirements based on the intended operating ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the PBSS series of NPN low VCEsat transistors from Nexperia. These devices utilize Breakthrough in Small Signal (BISS) technology to achieve superior performance compared to standard general-purpose transistors. The series is optimized for applications where space is limited and high switching efficiency is critical.

Single Bipolar Transistors Replacement Considerations

Check for direct cross-reference part numbers from other manufacturers that match the SOT457 package, 40V rating, and 4A current capacity. Verify pinout compatibility and electrical parameters such as VCEsat and hFE before substitution.

Single Bipolar Transistors FAQ

What is the maximum peak collector current for the PBSS302ND-Q?

The maximum peak collector current is 15 A for a single pulse with a duration of 1 ms or less.

Is the PBSS302ND-Q suitable for automotive applications?

Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the typical collector-emitter saturation resistance?

The typical collector-emitter saturation resistance is 55 mΩ when measured at a collector current of 6 A and a base current of 600 mA under pulsed conditions.