Single Bipolar Transistors PBSS4032NT,215 product image

PBSS4032NT,215

$0.54
  • Description:TRANS NPN 30V 2.6A TO-236AB
  • Series:-

SKU:bd067469042d Category: Brand:

  
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PBSS4032NT,215 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 30V 2.6A TO-236AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PBSS4032NT,215

  • Description:TRANS NPN 30V 2.6A TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2.6 A
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:320mV @ 300mA, 3A
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1A, 2V
  • Power - Max:1.1 W
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB
  • Grade:Automotive
  • Qualification:AEC-Q100

Single Bipolar Transistors datasheet and documents for PBSS4032NT,215

PBSS4032NT,215

Single Bipolar Transistors Overview

The PBSS4032NT is an NPN low VCEsat transistor manufactured by Nexperia USA Inc. It operates with a collector-emitter voltage of 30 V and supports a continuous collector current of 2.6 A, with a peak pulse capability of 5 A. The device features a collector-emitter saturation resistance of 76 mΩ typ at 2.5 A. It utilizes a SOT23 surface-mount package with three terminals. Key electrical parameters include a DC current gain (hFE) ranging from 100 to 500 depending on operating conditions, and a transition frequency (fT) of 180 MHz.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for high energy efficiency
  • Optimized switching time characteristics
  • High collector current capability at both continuous and peak levels
  • Maintains high DC current gain at elevated collector currents

Single Bipolar Transistors Applications

  • DC-to-DC conversion circuits
  • Battery-driven devices
  • Power management systems
  • Charging circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets the necessary environmental compliance standards for the intended deployment. Ensure the design accounts for the absolute maximum ratings provided in the datasheet to prevent device stress or failure during operation.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN solution with low saturation voltage is required for power switching applications. Consider the thermal resistance values relative to the PCB copper area available for heat dissipation. Evaluate the hFE requirements against the base drive capabilities of the control circuitry to ensure proper saturation.

Single Bipolar Transistors Part Context

This part belongs to the PBSS series of low VCEsat transistors designed for general-purpose switching. It serves as the NPN complement to the PBSS4032PT PNP variant. The device is housed in a standard SOT23 plastic package suitable for automated surface-mount assembly processes.

Single Bipolar Transistors Replacement Considerations

The official PNP complement is the PBSS4032PT. For direct replacement, verify pinout compatibility and ensure the substitute meets the 30 V and 2.6 A rating requirements.

PBSS4032NT,215PBSS4032NT,215
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