PE29101A-X

Description：IC GATE DRVR HALF-BRIDGE DIE
Series：-
Mfr：pSemi
Package：Tape & Reel (TR)

SKU:0856eb1b3439 Category: Gate Drivers Brand: pSemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

PE29101A-X is listed in the Gate Driver range at ChipApex. The manufacturer field lists pSemi. Its product description is IC GATE DRVR HALF-BRIDGE DIE. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for PE29101A-X

Description：IC GATE DRVR HALF-BRIDGE DIE
Series：-
Mfr：pSemi
Package：Tape & Reel (TR)
Driven Configuration：Half-Bridge
Channel Type：Synchronous
Number of Drivers：2
Gate Type：MOSFET (N-Channel)
Voltage - Supply：4V ~ 6.5V
Logic Voltage - VIL, VIH：-
Current - Peak Output (Source, Sink)：2A, 4A
Input Type：CMOS/TTL
Rise / Fall Time (Typ)：1ns, 1ns
Operating Temperature：-40°C ~ 125°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-
High Side Voltage - Max (Bootstrap)：-

Gate Driver datasheet and documents for PE29101A-X

PE29101A-X

Gate Driver Overview

The PE29101A-X is a half-bridge gate driver die manufactured by pSemi. It operates with a supply voltage range of 4V to 6.5V and supports CMOS/TTL input logic. The device provides peak output currents of 2A for sourcing and 4A for sinking. Typical rise and fall times are 1ns each. It is designed for synchronous drive configurations and controls N-channel MOSFETs. The component functions within a junction temperature range of -40°C to 125°C.

Gate Driver Feature Summary

Integrated half-bridge configuration for synchronous power switching applications
High-speed switching capability with 1ns typical transition times
Robust current drive performance supporting 4A sink and 2A source peaks
Compatible with standard CMOS and TTL logic input levels

Gate Driver Applications

Gate driving for N-channel MOSFETs in power conversion circuits
Synchronous rectification control in DC-DC converters
Half-bridge power stage implementation in motor drives
High-frequency switching applications requiring fast transient response

Gate Driver Procurement Notes

Verify the specific suffix designation as the base part number may have variations. Confirm the die form factor requirements for custom packaging integration. Check current availability status as the product listing indicates discontinuation. Ensure design compatibility with the specified 4V to 6.5V supply range. Validate thermal management strategies for the -40°C to 125°C operating temperature envelope.

Gate Driver Selection Notes

Select this component when a compact half-bridge driver solution is required for high-speed switching. Consider the 2A/4A current capabilities against the target MOSFET gate charge requirements. Evaluate the CMOS/TTL input compatibility with the controlling logic family. Assess the need for a bare die format versus packaged alternatives for space-constrained designs.

Gate Driver Part Context

This component belongs to the pSemi portfolio of power management integrated circuits. It serves as a specialized gate driver die intended for integration into custom power modules or discrete switching stages. The half-bridge topology distinguishes it from single-ended drivers, enabling push-pull operation for efficient power delivery.