PHK18NQ03LT,518

Single FETs, MOSFETs Overview

The PHK18NQ03LT,518 is an N-channel TrenchMOS logic level enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes plastic packaging and TrenchMOS technology for high efficiency through low switching and conduction losses. Key electrical parameters include a drain-source voltage of 30 V, continuous drain current of 20.3 A at 25 °C, and total power dissipation of 6.25 W. The device features a typical on-state resistance of 8.9 mΩ at VGS=10V and ID=25A, with a gate-source threshold voltage ranging from 1.3 V to 2.15 V.

Single FETs, MOSFETs Feature Summary

• High efficiency achieved via low switching and conduction losses
• Compatible with logic level gate drive sources

Single FETs, MOSFETs Applications

• DC-to-DC converters
• Notebook computers
• Switched-mode power supplies
• Voltage regulators

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring efficient power switching in computing or industrial environments. Ensure the design accommodates the 30 V drain-source voltage limit and thermal constraints defined by the 6.25 W power dissipation rating. Verify that the logic level gate drive capability aligns with the system's control voltage requirements.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PHK series of N-channel TrenchMOS logic level FETs. These devices are designed for use in computing, communications, consumer, and industrial applications. The product line emphasizes efficiency and suitability for logic-level driving, distinguishing it from standard MOSFETs that may require higher gate voltages for optimal performance.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for qualified substitute part numbers. Do not assume functional equivalence based solely on package type or general specifications without verifying electrical limits and pin configurations.