PHPT60610NYX

Single Bipolar Transistors Overview

The PHPT60610NY is a 60 V, 10 A NPN high power bipolar transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in an SOT669 (LFPAK56) Surface-Mounted Device plastic package. The device supports junction temperatures up to 175 °C and features side wettable flanks for optical solder inspection. Key electrical parameters include a collector-emitter saturation resistance of 25 mΩ typ at IC = 10 A and IB = 1 A, with a peak collector current capability of 20 A for single pulses.

Single Bipolar Transistors Feature Summary

• High thermal power dissipation capability suitable for demanding environments
• Operates reliably in high temperature applications up to 175 °C
• Reduces Printed Circuit Board requirements compared to DPAK transistors
• Provides high energy efficiency through reduced heat generation

Single Bipolar Transistors Applications

• Power management systems
• Load switch circuits
• Linear mode voltage regulators
• Backlighting applications
• Motor drive control

Single Bipolar Transistors Procurement Notes

Verify the specific product status against the latest official datasheet revision before design finalization. Confirm that the non-automotive qualification aligns with your target application requirements, as automotive qualified alternatives are available separately. Ensure proper thermal management design adheres to the provided derating curves for the selected PCB footprint.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and efficient thermal performance are required in a compact surface-mount form factor. The LFPAK56 package offers superior thermal characteristics compared to traditional packages like DPAK. Consider the 175 °C junction temperature rating for high-temperature operational environments and verify base drive requirements for optimal saturation performance.

Single Bipolar Transistors Part Context

This NPN transistor serves as the complement to the PHPT60610PY PNP variant within Nexperia's high power bipolar transistor portfolio. Designed for robust performance in power electronics, it addresses the need for reduced board space and improved thermal management in modern electronic designs requiring reliable switching and linear regulation capabilities.

Single Bipolar Transistors Replacement Considerations

PHPT60610PY