PJA3405_R1_00001

$0.38

Description：SOT-23, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b5ea3a1ec70c Category: Single FETs, MOSFETs Brand: Panjit International Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

PJA3405_R1_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is SOT-23, MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJA3405_R1_00001

Description：SOT-23, MOSFET
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：73mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：417 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for PJA3405_R1_00001

PJA3405_R1_00001

Single FETs, MOSFETs Overview

The PJA3405 is a 30V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It operates within a drain-source voltage range of -30 V and supports a continuous drain current of -3.6 A. The device utilizes an advanced trench process technology to achieve low on-resistance, specified as a maximum of 73 mΩ at VGS=-10V and ID=-3.6A, or 97 mΩ at VGS=-4.5V and ID=-2.4A. Key electrical parameters include a gate threshold voltage ranging from -1.0 V to -2.1 V, a total gate charge of 10 nC, and a power dissipation capacity of 1.25 W at 25°C ambient temperature. The component is housed in an SOT-23 package with a junction-to-ambient thermal resistance of 100 °C/W.

Single FETs, MOSFETs Feature Summary

Advanced Trench Process Technology for optimized performance
Low On-State Resistance (RDS(ON)) characteristics
Designed specifically for Switch Load and PWM applications

Single FETs, MOSFETs Applications

Switch Load circuits
PWM (Pulse Width Modulation) applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking specifications. Confirm that the requested part number matches the exact electrical ratings and package type required for the design. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards and material declarations.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 30V P-Channel MOSFET with a continuous current rating of 3.6 A. Ensure the driving circuit can provide sufficient gate voltage swing, such as -10V or -4.5V, to fully enhance the channel and minimize conduction losses. Verify that the thermal management strategy accounts for the 1.25 W power dissipation limit and the 100 °C/W thermal resistance in the intended operating environment.

Single FETs, MOSFETs Part Context

This component belongs to the general-purpose enhancement mode MOSFET category produced by Panjit International Inc. It is designed for surface-mount assembly using standard SMD/SMT processes. The device complies with EU RoHS 2011/65/EU directives and utilizes halogen-free green molding compound according to IEC61249 standards. It is not authorized for life-saving or high-reliability applications such as medical instruments or aerospace machinery.