Single FETs, MOSFETs PJD60N04_L2_00001 product image

PJD60N04_L2_00001

$1.28
  • Description:40V N-CHANNEL ENHANCEMENT MODE M
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5cdef1489e3e Category: Brand:

  
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PJD60N04_L2_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 40V N-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJD60N04_L2_00001

  • Description:40V N-CHANNEL ENHANCEMENT MODE M
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:12.7A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1759 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 62W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for PJD60N04_L2_00001

PJD60N04_L2_00001

Single FETs, MOSFETs Overview

The PJD60N04_L2_00001 is a single N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features a 40V drain-source breakdown voltage and supports continuous drain currents of 12.7A at ambient temperature and 60A at case temperature. The device utilizes silicon technology in a TO-252AA surface-mount package. Power dissipation capabilities are rated at 2W at ambient temperature and 62W at case temperature, with an operating junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Single N-Channel enhancement mode configuration for efficient switching applications
  • Advanced silicon planar trench technology construction
  • Lead-free finish compliant with RoHS standards

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Power management systems
  • General-purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix L2_00001 against official Panjit documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with standard TO-252AA footprints during PCB layout. Confirm AEC-Q101 qualification status if automotive reliability requirements apply to the final assembly.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring high current handling within a compact surface-mount form factor. Evaluate thermal management strategies carefully due to the significant difference between ambient and case power dissipation ratings. Verify gate threshold voltage compatibility with the intended control logic levels before integration into the design.

Single FETs, MOSFETs Part Context

This part belongs to the NFET-40SMN series of single N-channel MOSFETs from Panjit. It represents a standard discrete semiconductor solution designed for general power switching tasks. The product line focuses on providing reliable performance for consumer electronics and industrial power supplies where cost-effective silicon solutions are preferred over wide-bandgap alternatives.

Single FETs, MOSFETs Replacement Considerations

Consult official Panjit substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics when considering alternative manufacturers' parts to ensure mechanical and electrical compatibility without redesigning the host circuit board.

PJD60N04_L2_00001PJD60N04_L2_00001
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