Single FETs, MOSFETs PJMP125N60FRC_T0_00601 product image

PJMP125N60FRC_T0_00601

$4.73
  • Description:600V/ 125M / 30A/ SJ MOSFET WITH
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tube

SKU:75826a3118dd Category: Brand:

  
  • Quantity
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PJMP125N60FRC_T0_00601 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 600V/ 125M / 30A/ SJ MOSFET WITH. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJMP125N60FRC_T0_00601

  • Description:600V/ 125M / 30A/ SJ MOSFET WITH
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tube
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB-L
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for PJMP125N60FRC_T0_00601

PJMP125N60FRC_T0_00601

Single FETs, MOSFETs Overview

The PJMP125N60FRC is a 600V N-Channel Super Junction MOSFET manufactured by Panjit International Inc. It utilizes a TO-220AB-L package and features a maximum on-state resistance of 125mΩ at VGS=10V. The device supports a continuous drain current of 30A at 25°C case temperature, with a pulsed drain current capability of 76A. Electrical characteristics include a gate charge of 49nC and a reverse recovery time of 129ns. Thermal performance is defined by a junction-to-case thermal resistance of 0.42°C/W.

Single FETs, MOSFETs Feature Summary

  • Super Junction technology providing high-speed switching and low on-resistance
  • Validated avalanche ruggedness through 100% avalanche testing
  • Compliant with EU RoHS 2.0 standards using lead-free materials
  • Utilizes green molding compound in accordance with IEC 61249 standard

Single FETs, MOSFETs Applications

  • LLC resonant converter topologies
  • Phase-shifted full-bridge (PSFB) converters
  • Half-bridge (HB) power supplies
  • Full-bridge (FB) applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, as the datasheet specifies tube packing for the base part number. Confirm compliance requirements against the latest manufacturer documentation regarding environmental directives. Ensure that application parameters remain within the absolute maximum ratings provided in the official datasheet to maintain device integrity.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust switching performance in medium-power isolated converters. Evaluate the thermal management strategy based on the specified junction-to-case resistance. Consider the gate charge and threshold voltage when designing the driver circuitry to optimize switching losses and ensure reliable turn-on behavior under varying load conditions.

Single FETs, MOSFETs Part Context

This component belongs to the PJMP series of N-Channel Super Junction MOSFETs from Panjit International Inc. The series is engineered for high-efficiency power conversion systems. The TO-220AB-L package provides a standardized mechanical footprint suitable for through-hole mounting, facilitating integration into various industrial and commercial power supply architectures.

Single FETs, MOSFETs Replacement Considerations

TT10M-13

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The Drain-Source Breakdown Voltage (BVDSS) is rated at a minimum of 600V.

Is the device tested for avalanche energy?

Yes, the datasheet confirms that the device undergoes 100% avalanche testing.

PJMP125N60FRC_T0_00601PJMP125N60FRC_T0_00601
$4.73
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