PJQ1916_R1_00001

$0.37

Description：20V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c3f4265c419d Category: Single FETs, MOSFETs Brand: Panjit International Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

PJQ1916_R1_00001 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is 20V N-CHANNEL ENHANCEMENT MODE M. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PJQ1916_R1_00001

Description：20V N-CHANNEL ENHANCEMENT MODE M
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.1 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for PJQ1916_R1_00001

PJQ1916_R1_00001

Single FETs, MOSFETs Overview

The PJQ1916_R1_00001 is a single N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It features a drain-to-source voltage (Vdss) of 20 V and supports a continuous drain current (Id) of 950 mA at 25°C ambient temperature. The device has a maximum power dissipation of 500 mW and operates with a gate-source voltage limit of ±8 V. Input capacitance is specified at 46 pF @ 10 V. It is housed in an UFDFN-3 package.

Single FETs, MOSFETs Feature Summary

N-channel enhancement mode architecture for switching applications
Low voltage operation rated at 20 V drain-to-source
Compact surface-mount packaging

Single FETs, MOSFETs Applications

Low voltage DC-DC converter circuits
Load switching in portable devices
Battery protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix R1_00001 against official Panjit documentation to confirm exact electrical tolerances and tape-and-reel specifications. Ensure compatibility with UFDFN-3 footprint requirements during PCB layout. Cross-reference datasheet revisions for any updates to thermal resistance or switching characteristics before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low-voltage switching with moderate current handling capabilities up to 950 mA. The UFDFN-3 package suits space-constrained layouts. Verify that the 20 V rating provides sufficient headroom for the target supply voltage and transient conditions. Consider thermal management constraints given the 500 mW power dissipation limit.

Single FETs, MOSFETs Part Context

This part belongs to Panjit's single FET MOSFET portfolio, designed for general-purpose switching tasks. It complements other low-voltage options in the series, offering a balance between current capacity and package size. The N-channel configuration is standard for low-side switching applications in consumer electronics and industrial control modules.