PMV65UNER

Single FETs, MOSFETs Overview

The PMV65UNER is a single N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in an SOT-23 (TO-236AB) surface-mount package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 2.8 A. Its on-resistance is specified at 73 mOhms, with a gate-source threshold voltage of 450 mV. The component supports a maximum power dissipation of 940 mW and operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench MOSFET technology for enhanced switching performance and power dissipation capabilities.
• Features logic-level compatibility with a low gate-source threshold voltage for efficient drive requirements.
• Includes Electrostatic Discharge protection rated at greater than 2 kV Human Body Model.

Single FETs, MOSFETs Applications

• Relay driver circuits
• High-speed line drivers
• Low-side load switch applications
• General switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'EAR' or 'UNER' against the manufacturer's official datasheet to confirm exact binning and tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations directly from the product database before integration. Ensure the ordering part number matches the required package variant and quality level defined in the latest Nexperia documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact N-channel solution with low on-resistance and high current capability in an SOT-23 package. The low threshold voltage makes it suitable for logic-level control interfaces. Consider the thermal dissipation limits and operating temperature range when designing for high-power environments or extreme ambient conditions.

Single FETs, MOSFETs Part Context

This component belongs to the PMV65UNE series of N-channel Trench MOSFETs from Nexperia. It shares the same core die and electrical characteristics as the PMV65UNEA variant, differing primarily in packaging configuration such as reel versus cut-tape options. The series is designed for general-purpose switching applications requiring small form factors.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify cross-reference compatibility with other 20 V N-channel SOT-23 MOSFETs only after confirming pinout and electrical parameter alignment with the official datasheet.

Single FETs, MOSFETs FAQ

What is the gate-source threshold voltage for the PMV65UNER?

The gate-source threshold voltage is specified at 450 mV.

Does the PMV65UNER include ESD protection?

Yes, the device includes Electrostatic Discharge protection rated at greater than 2 kV HBM.