PN3565 TIN/LEAD

Single Bipolar Transistors Overview

The PN3565 TIN/LEAD is a silicon NPN single bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a collector-emitter voltage (VCEO) of 25 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 50 mA with a power dissipation rating of 625 mW. DC current gain (hFE) ranges from 150 to 600 at 1 mA and 10 V, while the transition frequency (fT) is 240 MHz.

Single Bipolar Transistors Feature Summary

• Utilizes silicon technology for reliable small-signal switching and amplification in low-power applications.
• Features a high DC current gain range suitable for sensitive signal processing tasks.
• Designed for through-hole mounting in standard TO-92-3 packages.

Single Bipolar Transistors Applications

• General-purpose small-signal amplification circuits
• Low-noise audio pre-amplifier stages
• Electronic switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity and lead times directly with authorized distributors or the manufacturer, as this part may be subject to limited availability or discontinuation status. Confirm that the tin/lead plating meets specific project requirements regarding material compliance and solderability standards before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage NPN transistor with moderate current handling and high gain is required for through-hole designs. Ensure the application voltage does not exceed the 25 V collector-emitter limit and that thermal management accommodates the 625 mW dissipation rating within the specified operating temperature range.

Single Bipolar Transistors Part Context

This component belongs to the PN35 series of small-signal bipolar transistors produced by Central Semiconductor Corp. The series focuses on general-purpose silicon NPN devices optimized for low-power electronics. The PN3565 variant specifically targets applications requiring stable gain characteristics and robust performance in compact through-hole form factors.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative NPN transistors having similar voltage ratings, current limits, and package dimensions through official datasheet cross-references.