Single Bipolar Transistors PN4917 TRE TIN/LEAD product image

PN4917 TRE TIN/LEAD

$0.29
  • Description:30V 100MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:4307be13405a Category: Brand:

  
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PN4917 TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 30V 100MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PN4917 TRE TIN/LEAD

  • Description:30V 100MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):25nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 10mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:450MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for PN4917 TRE TIN/LEAD

PN4917 TRE TIN/LEAD

Single Bipolar Transistors Overview

The PN4917 TRE TIN/LEAD is a PNP silicon epitaxial planar transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V. The device supports a continuous collector current of 600 mA with a power dissipation rating of 625 mW. It operates within a temperature range of -65°C to +150°C and utilizes a TO-92-3 package for through-hole mounting.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration suitable for complementary switching applications
  • Epitaxial planar construction for stable performance characteristics
  • High junction temperature capability up to 150°C

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Complementary amplifier stages
  • Driver circuits requiring PNP control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TRE' against official datasheets to confirm tape-and-reel packaging and tin/lead plating specifications. Confirm RoHS exemption status as leaded components may differ from standard environmental directives. Validate manufacturing lot dates and authenticity through authorized distribution channels before integration into production designs.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 80 V collector-emitter voltage and 600 mA current capacity is required in a TO-92-3 package. Ensure thermal management accommodates the 625 mW power dissipation limit. Compare gain characteristics and saturation voltages against circuit requirements to verify suitability for low-power switching or amplification tasks.

Single Bipolar Transistors Part Context

This part belongs to Central Semiconductor's discrete bipolar transistor lineup, specifically designed for general-purpose electronic applications. The PN4917 series provides reliable PNP switching capabilities in a compact through-hole form factor, commonly used in consumer electronics and industrial control systems where moderate voltage and current handling are necessary.

Single Bipolar Transistors Replacement Considerations

Consult manufacturer cross-reference lists for verified equivalents. Common substitutes may include other PNP transistors with matching VCEO, IC, and package dimensions. Verify pinout compatibility and electrical parameter overlaps before substitution.

PN4917 TRE TIN/LEADPN4917 TRE TIN/LEAD
$0.29
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