PN5127 TIN/LEAD

$0.15

Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
Series：-

SKU:3c9417c6b517 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

PN5127 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TH TRANSISTOR-SMALL SIGNAL (. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PN5127 TIN/LEAD

Description：TH TRANSISTOR-SMALL SIGNAL (<=1A
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：12 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：50nA
DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 2mA, 10V
Power - Max：-
Frequency - Transition：90MHz
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for PN5127 TIN/LEAD

PN5127 TIN/LEAD

Single Bipolar Transistors Overview

The PN5127 is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor. It utilizes a TO-92-3 through-hole package and operates with a collector-base voltage of 20 V, a collector-emitter voltage of 12 V, and an emitter-base voltage of 3 V. The device supports a continuous collector current of 10 mA with a power dissipation of 350 mW. Key electrical characteristics include a DC current gain ranging from 15 to 300 at specified test conditions, a saturation voltage of 300 mV, and a transition frequency of 150 MHz.

Single Bipolar Transistors Feature Summary

NPN polarity configuration for single-ended switching and amplification applications
Silicon planar technology construction for stable performance
Through-hole mounting compatibility via standard TO-92-3 leaded package

Single Bipolar Transistors Applications

General-purpose signal amplification circuits
Low-power switching applications
Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm tin/lead plating availability. Confirm RoHS compliance status as leaded variants may differ from standard environmental declarations. Validate that the TO-92-3 package dimensions match your PCB footprint requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage NPN transistor with moderate gain is required for through-hole designs. Ensure the 12 V collector-emitter rating meets circuit voltage constraints. Consider the 10 mA current limit for load requirements and verify thermal management needs relative to the 350 mW power dissipation capability in the intended enclosure.

Single Bipolar Transistors Part Context

This part belongs to Central Semiconductor's discrete bipolar transistor portfolio. It serves as a general-purpose active element within the broader category of small-signal silicon transistors. The TO-92-3 form factor is widely used in consumer electronics and industrial control boards requiring reliable through-hole interconnection methods.