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PS9505L3-E3-AX is listed in the Isolators - Gate Drivers range at ChipApex. The manufacturer field lists CEL. Its product description is OPTOISO 5KV 1CH GATE DVR 8DIP GW. Review the specifications below when checking this part for your BOM.
The PS9505L3-E3-AX is a single-channel high-speed optocoupler gate driver manufactured by CEL. It features an isolation voltage of 5000 Vrms and a common mode transient immunity of 25 kV/µs. The device provides a peak output current of 2.5 A with rise and fall times of 50 ns. Propagation delay is limited to 250 ns, and pulse width distortion is 100 ns maximum. It operates on an output supply voltage of 15 V to 30 V, with a forward current of 25 mA and forward voltage of 1.56 V. The operating temperature range spans from -40°C to 110°C.
Verify the specific suffix E3 against official datasheets to confirm lead-free compliance status. Confirm package type matches requirements, as variations exist between DIP and SMD formats within the family. Check manufacturer lifecycle status, as availability may be restricted or discontinued. Ensure input parameters align with system logic levels before integration.
Select this component when high isolation voltage and fast switching speeds are required for power stage control. The 2.5 A output current supports direct drive of medium-power switches without external buffers. Consider thermal management due to power dissipation limits. Verify that the 15 V to 30 V output supply range matches the target gate drive voltage requirements.
This part belongs to the CEL PS9505 series of photocouplers designed for gate driver applications. The series emphasizes high speed and high output current capabilities. The PS9505L3 variant specifically targets applications requiring robust isolation and fast transient response. It serves as a critical interface between low-voltage control circuits and high-voltage power stages.
PS9505L3-AX is a related variant within the same product family. Verify pinout compatibility and electrical specifications before substitution. Ensure the replacement part meets the same isolation and current drive requirements.
The device offers a minimum common mode transient immunity of 25 kV/µs.
Yes, the chip is designed to effectively drive SiC power FETs due to its high output current and voltage capabilities.
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