PSMN1R6-30PL,127

$1.20

Description：MOSFET N-CH 30V 100A TO220AB
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk,Tube

SKU:eed6de7227e5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN1R6-30PL,127 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 100A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN1R6-30PL,127

Description：MOSFET N-CH 30V 100A TO220AB
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：212 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12493 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：306W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for PSMN1R6-30PL,127

PSMN1R6-30PL,127

Single FETs, MOSFETs Overview

The Nexperia PSMN1R6-30PL,127 is a logic level N-channel MOSFET housed in a TO-220AB (SOT78) package. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at Tmb = 25 °C with VGS = 10 V. The device exhibits a maximum on-state resistance of 1.7 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 306 W at Tmb = 25 °C. The junction temperature range spans from -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

High efficiency achieved through minimized switching and conduction losses
Compatible with logic level gate drive sources for simplified control

Single FETs, MOSFETs Applications

DC-to-DC converters
Load switching
Motor control
Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements against the 306 W total power dissipation limit at Tmb = 25 °C. Ensure gate drive voltages align with the logic level specification for optimal RDSon performance. Confirm that peak drain currents remain within safe operating area limits defined by pulse duration and mounting base temperature conditions.

Single FETs, MOSFETs Part Context

This component belongs to Nexperia's logic level N-channel MOSFET portfolio designed for industrial, communications, and domestic equipment applications. It utilizes a plastic single-ended package with heatsink mounting capabilities. The product is qualified for operation up to 175 °C junction temperature, supporting robust performance in demanding environments.

Single FETs, MOSFETs Replacement Considerations

Cross-reference pinout compatibility and electrical parameters such as VDS, ID, and RDSon when identifying substitutes. Verify package dimensions and mounting hole configurations to ensure mechanical fit. Review datasheet revisions to confirm parameter consistency across potential replacement part numbers.