PSMN2R6-30YLC,115

$0.40

Description：MOSFET N-CH 30V 100A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:147495b0d847 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMN2R6-30YLC,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 30V 100A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMN2R6-30YLC,115

Description：MOSFET N-CH 30V 100A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2435 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：106W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Single FETs, MOSFETs datasheet and documents for PSMN2R6-30YLC,115

PSMN2R6-30YLC,115

Single FETs, MOSFETs Overview

The Nexperia PSMN2R6-30YLC,115 is a logic level enhancement mode N-channel MOSFET utilizing NextPower Superjunction technology in an LFPAK (SOT669) package. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits ultra-low on-state resistance, with typical values of 2.8 mΩ at VGS=10V and 3.1 mΩ at VGS=4.5V. Total gate charge is typically 18 nC at VGS=4.5V. It operates within a junction temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Optimized for 4.5V gate drive sources using NextPower Superjunction technology
Ultra-low total gate charge and output charge for high system efficiencies across load ranges
Low parasitic inductance and resistance inherent to the Power SO8 package design
Qualified for operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

DC-to-DC converters
Lithium-ion battery protection
Load switching
Power OR-ing
Server power supplies
Synchronous rectifier

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical at both light and heavy loads. The optimized gate charge supports efficient switching with standard 4.5V logic drivers. Ensure thermal management accommodates the 106 W dissipation rating at 25 °C mounting base temperature. Verify that the application does not require automotive qualification, as this product is not specified for such use.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PSMN series of N-channel logic level MOSFETs. These devices are designed for industrial, communications, and domestic equipment applications. The LFPAK package provides a robust surface-mount solution with a large mounting base connected to the drain for effective heat dissipation.