PSMNR90-40YLHX

$1.99

Description：MOSFET N-CH 40V 300A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8b7403bfa97f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

PSMNR90-40YLHX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 40V 300A LFPAK56. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PSMNR90-40YLHX

Description：MOSFET N-CH 40V 300A LFPAK56
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.94mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.05V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：168 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：12673 pF @ 20 V
FET Feature：Schottky Diode (Body)
Power Dissipation (Max)：333W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56; Power-SO8
Package / Case：SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for PSMNR90-40YLHX

PSMNR90-40YLHX

Single FETs, MOSFETs Overview

The Nexperia PSMNR90-40YLHX is an N-channel enhancement mode MOSFET utilizing NextPower-S3 Schottky-Plus technology. It features a 40 V drain-source voltage rating and a logic-level gate drive optimized for 4.5 V operation. The device delivers a continuous drain current of 300 A at Tmb = 25 °C with a maximum on-state resistance (RDSon) of 0.94 mΩ at VGS = 10 V. Packaged in the LFPAK56E (SOT1023) format, it supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 577 mJ.

Single FETs, MOSFETs Feature Summary

NextPower-S3 Superjunction technology enables superfast switching characteristics combined with soft body-diode recovery.
Schottky-Plus integrated body diode provides soft switching performance while minimizing high leakage currents.
LFPAK56E package construction incorporates copper-clip and solder die attach for enhanced thermal dissipation and reliability.
Exposed leads facilitate wave soldering processes and allow for visual inspection of solder joints.

Single FETs, MOSFETs Applications

High-performance synchronous rectification
DC-to-DC converters
Server power supplies
Brushless DC motor control
Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'X' against official Nexperia documentation to confirm packaging variations or tape-and-reel specifications. Ensure design compliance with the absolute maximum ratings provided in the datasheet. Confirm that the application environment remains within the specified -55 °C to +175 °C junction temperature range. Validate PCB layout requirements for the LFPAK56E package to achieve intended thermal performance.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling and low conduction losses at logic-level gate voltages. The 4.5 V optimized gate drive simplifies driver circuit design compared to standard level devices. Consider the thermal resistance characteristics and mounting base temperature limits when designing heat dissipation strategies. Evaluate the avalanche energy rating if the application involves inductive load switching without external clamping.

Single FETs, MOSFETs Part Context

This device belongs to Nexperia's NextPower-S3 series, which utilizes advanced TrenchMOS Superjunction technology. The LFPAK56E package is designed for high-power density applications, offering superior thermal performance through its exposed metal pad and copper-clip construction. This technology family targets efficiency improvements in power conversion and motor control systems.