PZT2222A

Single Bipolar Transistors Overview

The PZT2222A is an NPN epitaxial planar transistor manufactured by Good-Ark Semiconductor in a SOT-223 surface-mount package. It features a collector-emitter voltage of 40 V and a continuous collector current rating of 600 mA. The device supports a junction temperature range from -55 °C to +150 °C with a power dissipation capacity of 1 W. Key electrical characteristics include a DC current gain (hFE) ranging from 35 to 300 at IC = 150 mA, a transition frequency (fT) of 300 MHz, and low saturation voltages such as VCE(sat) of 0.3 V at IC = 150 mA.

Single Bipolar Transistors Feature Summary

• Epitaxial planar die construction for reliable switching performance
• High current capability supporting up to 600 mA continuous operation
• Low saturation voltage characteristics for efficient power handling
• RoHS compliant manufacturing process

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Linear amplification stages
• Complementary pairs with PZT2907A

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the SOT-223 footprint matches the provided pad layout dimensions. Ensure thermal management strategies account for the 1 W power dissipation limit at the intended ambient operating temperature.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN switching transistor with moderate current handling is required in a compact SOT-223 form factor. Consider the complementary PZT2907A for push-pull configurations. Evaluate the hFE spread and saturation voltage requirements against the application's load conditions to ensure adequate drive margins.

Single Bipolar Transistors Part Context

This part belongs to Good-Ark Semiconductor's discrete transistor portfolio, specifically designed for general-purpose applications. It serves as the NPN counterpart to the PZT2907A PNP transistor, allowing for matched complementary pairs in amplifier and switching topologies.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the SOT-223 package outline and meets or exceeds the 40 V VCEO and 600 mA IC ratings.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 40 V.

Is there a complementary PNP version available?

Yes, the PZT2907A is the complementary PNP type transistor available from the same manufacturer.

What is the typical transition frequency?

The transition frequency (fT) is specified as 300 MHz under test conditions of VCE=20V and IC=20mA.