R1RP0416DGE-2PR#B1

Memory IC Overview

The R1RP0416DGE-2PR#B1 is a 4-Mbit high-speed static RAM organized as 256-kword × 16-bit. It utilizes CMOS process technology to achieve a maximum access time of 12ns. The device operates on a single 5.0V supply (4.5V to 5.5V) and features TTL-compatible inputs and outputs. It is housed in a 400-mil 44-pin plastic SOJ package.

Memory IC Feature Summary

• High-speed parallel data transfer with equal access and cycle times
• Directly compatible with TTL logic levels for all inputs and outputs
• Supports independent upper and lower byte selection via UB# and LB# pins

Memory IC Applications

• Cache memory systems requiring high-speed access
• Buffer memory configurations in embedded systems
• Applications necessitating wide bit width configuration

Memory IC Procurement Notes

Verify the specific suffix B1 against official Renesas documentation to confirm manufacturing site or material specifications, as ordering suffixes may indicate backend changes without altering function. Confirm RoHS compliance status and moisture sensitivity level prior to procurement.

Memory IC Selection Notes

Select this component when a 16-bit wide interface is required alongside fast access speeds. Ensure the design accommodates the specified operating current limits and provides adequate thermal dissipation for the plastic SOJ package within the 0°C to +70°C temperature range.

Memory IC Part Context

This part belongs to the R1RP0416D Series, which includes variants with different access times and power versions. The series is designed for applications demanding high-density memory with a wide bus width, utilizing a 6-transistor memory cell structure for performance optimization.

Memory IC Replacement Considerations

MFR Recommended substitute: CY7C1041G-10ZSXIT by Infineon Technologies.