R6007JNJGTL

Single FETs, MOSFETs Overview

The R6007JNJGTL is a single N-Channel Power MOSFET from ROHM Semiconductor, part of the PrestoMOS™ third-generation series. It features a TO-263-3 (LPTS) surface-mount package and utilizes Silicon technology. Key electrical parameters include a Drain-Source Voltage (Vds) of 600 V and a continuous Drain Current (Id) of 7 A. The device exhibits a typical on-resistance (Rds(on)) of 780 mΩ at Vgs = 15 V. Gate characteristics specify a threshold voltage (Vgs(th)) of 7 V, a total gate charge (Qg) of 17.5 nC, and a maximum gate-source voltage of ±30 V. Thermal performance includes a power dissipation (Pd) of 96 W, with an operating temperature range from -55 °C to +150 °C. Switching times are characterized by a rise time of 15 ns and a fall time of 25 ns.

Single FETs, MOSFETs Feature Summary

• Integrates a fast recovery body diode for efficient switching applications.
• Utilizes PrestoMOS™ third-generation Super Junction technology to achieve low on-resistance.
• Designed for simplified drive circuit requirements with optimized gate charge.

Single FETs, MOSFETs Applications

• Motor drives
• Inverters
• White home appliances

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'GTL' against the manufacturer's current datasheet to confirm packaging details and RoHS compliance status. Ensure the component designation matches the exact part number required for your bill of materials, as variations in suffixes may indicate different tape-and-reel specifications or regional certifications. Cross-reference the manufacturer's official ordering information to validate availability and lead times prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with moderate current capacity in a compact surface-mount footprint. The 600V rating suits industrial and consumer power applications. Consider the 780 mΩ on-resistance for thermal management calculations. Verify that the driving circuit can supply the necessary gate voltage levels, as the threshold voltage is specified at 7 V. Ensure the PCB layout supports the TO-263-3 package thermal dissipation capabilities.

Single FETs, MOSFETs Part Context

This device belongs to the PrestoMOS™ R60xxJNx series, which integrates fast recovery diodes into N-channel MOSFETs. The series targets efficiency improvements in motor and inverter applications for white goods and EV charging infrastructure. The R6007JNJGTL specifically offers a balance of 600V blocking capability and 7A current handling within the LPTS (TO-263S) package format.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official replacement guide or contact technical support for verified cross-reference data before substituting this component.