RAL045P01TCR

Single FETs, MOSFETs Overview

The RAL045P01TCR is a P-channel MOSFET from ROHM Semiconductor, designed for low-voltage drive applications. It features a 12V drain-source breakdown voltage and supports a continuous drain current of 4.5A. The device operates with a gate-source drive voltage of -1.5V, achieving a typical on-resistance of 0.05Ω at this level. Packaged in a TUMT6 (SOT-457T) surface-mount case, it offers a power dissipation rating of 1.25W and a gate charge of 40nC. The component functions as an enhancement-mode transistor within the specified temperature range.

Single FETs, MOSFETs Feature Summary

• Optimized for 1.5V gate drive operation to reduce control circuit complexity
• Low on-resistance characteristics at reduced gate voltages
• Compact surface-mount packaging suitable for space-constrained designs

Single FETs, MOSFETs Applications

• Battery-powered portable devices requiring efficient power switching
• Low-voltage DC-DC converter output stages
• Load switch applications in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's latest datasheet before procurement. Confirm that the TUMT6 package dimensions match the target PCB footprint. Ensure the supply status is active for new designs, as some related series may be discontinued or restricted. Cross-reference the RoHS compliance status with current regulatory requirements for the intended market.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel MOSFET is required for low-side or high-side switching with minimal gate drive voltage. The 1.5V drive capability makes it suitable for systems powered by single-cell lithium batteries or low-voltage logic interfaces. Consider the 4.5A current rating and 0.05Ω resistance for thermal management in compact enclosures. Compare gate charge specifications if switching frequency efficiency is critical for the application.

Single FETs, MOSFETs Part Context

This part belongs to ROHM's series of 1.5V drive P-channel MOSFETs. These components are engineered to replace traditional MOSFETs that require higher gate voltages, simplifying driver design in battery-operated equipment. The RAL045P01TCR utilizes silicon technology and is housed in a small outline transistor package to maximize board space efficiency while maintaining robust electrical performance.

Single FETs, MOSFETs Replacement Considerations

RAQ045P01TCR is listed as a recommended replacement with the same pinout and package. RF4C100BCTCR is another recommended option sharing the same package but differing in voltage ratings.