Single FETs, MOSFETs RD3N03BATTL1 product image

RD3N03BATTL1

$1.16
  • Description:PCH -80V -30A, TO-252 (DPAK), PO
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:00c6a7ee83de Category: Brand:

  
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RD3N03BATTL1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is PCH -80V -30A, TO-252 (DPAK), PO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RD3N03BATTL1

  • Description:PCH -80V -30A, TO-252 (DPAK), PO
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:56mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 40 V
  • FET Feature:-
  • Power Dissipation (Max):54W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for RD3N03BATTL1

RD3N03BATTL1

Single FETs, MOSFETs Overview

The RD3N03BATTL1 is a P-channel power MOSFET manufactured by ROHM Semiconductor, designed for high-efficiency switching applications. It features an 80V drain-source voltage rating and supports a continuous drain current of 60A. The device utilizes a TO-252-3 surface-mount package to facilitate thermal management. Key electrical characteristics include a maximum on-resistance of 26 milliohms at a gate-source voltage of 4.5V, ensuring low conduction losses. The component operates within a temperature range of -55°C to +150°C and offers a power dissipation capacity of 101W.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance design minimizes conduction losses in power circuits
  • High current handling capability suitable for demanding load applications
  • Robust thermal performance with elevated maximum junction temperature rating

Single FETs, MOSFETs Applications

  • DC-DC converter circuits
  • Motor driver interfaces
  • Power supply load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TL1 against the manufacturer's official datasheet to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure the ordering part number matches the exact electrical specifications required for the target circuit design before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel configuration is required for high-current switching operations. The TO-252 package provides a balance between current capacity and board space efficiency. Evaluate the thermal requirements of the application against the 101W dissipation rating to determine necessary heatsinking or PCB copper area.

Single FETs, MOSFETs Part Context

This device belongs to ROHM's RD3 series of power MOSFETs, which are engineered for general-purpose switching uses. The series emphasizes low on-resistance and fast switching speeds to improve overall system efficiency. These components are standard-grade devices intended for industrial and consumer electronics rather than automotive safety-critical systems.

Single FETs, MOSFETs Replacement Considerations

Consult the official ROHM replacement guide for verified cross-reference part numbers. Do not substitute based solely on pin compatibility; verify that the alternative device meets or exceeds the original voltage, current, and thermal specifications.

RD3N03BATTL1RD3N03BATTL1
$1.16
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