RDD023N50TL

Single FETs, MOSFETs Overview

The RDD023N50TL is an N-channel power MOSFET manufactured by Rohm Semiconductor. It features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 2A at case temperature. The device utilizes a CPT package with a tab for thermal management. It is designed for high-voltage switching applications requiring robust performance.

Single FETs, MOSFETs Feature Summary

• High voltage capability suitable for demanding power environments
• Integrated thermal tab for efficient heat dissipation
• Surface mount construction for automated assembly

Single FETs, MOSFETs Applications

• Power supply circuits
• Industrial motor control systems
• High voltage switching modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TL against the official Rohm datasheet to confirm tape-and-reel packaging specifications. Ensure the component matches the required CPT package dimensions and terminal configuration for your PCB layout. Confirm RoHS compliance status if environmental regulations apply to your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V rating is mandatory for the application. The 2A current limit requires careful consideration of thermal design due to the package type. Verify that the gate drive requirements align with the MOSFET's threshold characteristics before finalizing the circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Rohm's discrete power semiconductor portfolio, specifically within their N-channel MOSFET lineup. These components are engineered for reliability in industrial and consumer electronics. The RDD series typically targets applications needing high breakdown voltage in compact surface-mount form factors.

Single FETs, MOSFETs Replacement Considerations

The R6002END3TL1 is listed as a recommended replacement with the same package type. Verify pinout compatibility and electrical parameters such as Vdss and Id before substitution.