RFP2N15

Single FETs, MOSFETs Overview

The RFP2N15 is an N-Channel enhancement mode silicon gate power field-effect transistor manufactured by Harris Corporation. It is designed for applications requiring high speed and low gate drive power, such as switching regulators, motor drivers, and relay drivers. The device supports direct operation from integrated circuits. Key electrical parameters include a maximum drain current of 2 A, a drain-source voltage rating of 150 V, and an on-resistance (rDS(ON)) of 1.750 Ω.

Single FETs, MOSFETs Feature Summary

• N-Channel enhancement mode silicon gate construction
• Designed for high-speed switching applications with low gate drive power requirements
• Capable of direct integration with integrated circuits

Single FETs, MOSFETs Applications

• Switching regulators
• Motor drivers
• Relay drivers
• Drivers for high power bipolar switching transistors

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as the component was originally developed under the TA09196 designation and later associated with Harris Semiconductor before corporate acquisitions by Intersil and Renesas. Confirm that the specific part number corresponds to the 150V variant rather than the similar 120V RFP2N12 model. Ensure documentation aligns with the September 1998 datasheet specifications for accurate technical compliance.

Single FETs, MOSFETs Selection Notes

Select this component when an N-Channel MOSFET with a 150V breakdown voltage and 2A continuous current capability is required. The 1.750 Ω on-resistance makes it suitable for moderate power switching tasks where efficiency is balanced with cost. It is appropriate for designs needing direct IC interface without additional level-shifting circuitry due to its enhancement mode characteristics.

Single FETs, MOSFETs Part Context

The RFP2N15 belongs to the RFP2N series of power MOSFETs, which also includes the RFP2N12 variant offering a 120V rating. Both devices share identical current and resistance specifications but differ in voltage tolerance. This series was historically referenced as developmental type TA09196 prior to commercial release by Harris Semiconductor.

Single FETs, MOSFETs Replacement Considerations

The RFP2N12 serves as a voltage-limited substitute if the application operates below 120V. Verify pinout compatibility and thermal performance when substituting, as both parts share the same package and electrical limits except for the drain-source voltage rating.