Single FETs, MOSFETs RFP7N35 product image

RFP7N35

$1.20
  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk

SKU:c4d4be36e75e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

RFP7N35 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Harris Corporation. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RFP7N35

  • Description:N-CHANNEL POWER MOSFET
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):350 V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:750mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):75W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for RFP7N35

RFP7N35

Single FETs, MOSFETs Overview

The RFP7N35 is an N-channel power MOSFET manufactured by Harris Corporation. It features a 350 V drain-source voltage rating and supports a continuous drain current of 7 A at case temperature. The device has a maximum on-resistance of 0.75 Ohms and a power dissipation capacity of 75 W at case temperature. It is housed in a TO-220 through-hole package, suitable for general-purpose switching applications requiring robust thermal performance.

Single FETs, MOSFETs Feature Summary

  • N-channel silicon power MOSFET construction
  • High voltage blocking capability up to 350 V
  • Through-hole TO-220 package for reliable mounting

Single FETs, MOSFETs Applications

  • General purpose power switching circuits
  • DC-DC converter topologies
  • Motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by L3Harris Technologies. Confirm RoHS compliance status with the specific supplier, as sources indicate conflicting information regarding regulatory adherence. Ensure the TO-220 package type matches your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 350 V rating is required for high-side or low-side switching. The 0.75 Ohm on-resistance dictates conduction losses; ensure adequate heatsinking to maintain junction temperatures within limits during continuous 7 A operation. Compare against newer alternatives from L3Harris for potential improvements in switching speed or thermal resistance if system constraints allow.

Single FETs, MOSFETs Part Context

This part belongs to the single FETs and MOSFTs category from Harris Corporation. The RFP series typically denotes ruggedized power transistors designed for industrial and military-grade environments. Following corporate restructuring, these components are now often associated with L3Harris Narda-Miteq product lines.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Users should consult L3Harris official cross-reference guides for equivalent devices with matching electrical specifications and pinout configurations.

RFP7N35RFP7N35
$1.20
Buy Now

Recent News