RJ1G08CGNTLL

Single FETs, MOSFETs Overview

The RJ1G08CGNTLL is a surface-mount N-channel power MOSFET manufactured by ROHM Semiconductor. It features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 80 A at ambient temperature. The device utilizes LPTL packaging, equivalent to the TO-263-3 or D²Pak form factor with three terminals. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 5.6 mΩ at 10 V gate drive and 80 A current. The total gate charge (Qg) is 31.1 nC at 10 V, and the input capacitance (Ciss) is 2410 pF at 20 V. Maximum power dissipation is rated at 78 W at Ta, with a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• N-channel MOSFET technology designed for high-efficiency switching applications
• Low on-resistance characteristic optimized for minimal conduction losses
• Surface-mount LPTL package providing robust thermal management capabilities

Single FETs, MOSFETs Applications

• Power supply circuits requiring low-voltage high-current switching
• DC-DC converter topologies in industrial equipment
• Motor control systems utilizing N-channel logic-level drive

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TLL against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure compatibility with RoHS directives if required by the target application. Cross-reference the exact part number with authorized distributors to confirm current availability status, as component lifecycles may vary by region.

Single FETs, MOSFETs Selection Notes

Select this component when a 40 V rating and 80 A current capacity are required in a surface-mount format. The 5.6 mΩ Rds(on) specification supports efficient power handling in compact designs. Consider the 31.1 nC gate charge for driver capability requirements. The LPTL package offers a balance between thermal performance and PCB space constraints compared to through-hole alternatives.

Single FETs, MOSFETs Part Context

This device belongs to the RJ1G08 series of N-channel power MOSFETs from ROHM Semiconductor. The series focuses on low-voltage, high-current applications where efficiency and thermal performance are critical. The LPTL package variant provides standardized mounting dimensions compatible with common surface-mount assembly processes used in modern electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

The RS6G100BGTB1 is listed as a similar specification replacement option. Note that the substitute uses an HSOP8 package rather than the LPTL form factor, requiring PCB layout adjustments. Verify pinout compatibility and thermal resistance differences before implementation.