Single FETs, MOSFETs RJK1003DPN-A0#T2 product image

RJK1003DPN-A0#T2

  • Description:MOSFET N-CH 100V 50A TO220ABA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:432952cf1d37 Category: Brand:

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RJK1003DPN-A0#T2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is MOSFET N-CH 100V 50A TO220ABA. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RJK1003DPN-A0#T2

  • Description:MOSFET N-CH 100V 50A TO220ABA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Ta)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220ABA
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for RJK1003DPN-A0#T2

RJK1003DPN-A0#T2

Single FETs, MOSFETs Overview

The RJK1003DPN-A0#T2 is an N-Channel Power MOSFET designed for switching applications such as motor drives and load switches. It features a Drain-to-Source Voltage (Vdss) of 100 V and a Continuous Drain Current (Id) of 50 A at 25°C ambient temperature. The device exhibits a low on-resistance (Rds(on)) of 11 mΩ, ensuring efficient power handling with minimal conduction losses. Key electrical characteristics include a fall time of 10 ns and a minimum forward transconductance of 100 S. Packaged in a TO-220AB through-hole format, it offers high-speed switching capabilities combined with high robustness for industrial and automotive power management systems.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance for efficient power conversion
  • High-speed switching capability
  • High robustness for demanding environments

Single FETs, MOSFETs Applications

  • Motor drive circuits
  • Load switch applications
  • General purpose power switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix #T2 to confirm tape-and-reel packaging requirements against your assembly line specifications. Ensure the TO-220AB package footprint matches your PCB design constraints. Confirm RoHS3 compliance status if required by your environmental regulations. Cross-reference the manufacturer part number with distributor listings to ensure authenticity and traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and 50 A continuous current capacity are required in a through-hole package. The 11 mΩ on-resistance makes it suitable for applications prioritizing efficiency over extreme miniaturization. Consider thermal management solutions appropriate for the TO-220AB package given the 125 W case power dissipation rating. Evaluate switching speed requirements against the 10 ns fall time specification.

Single FETs, MOSFETs Part Context

This part belongs to Renesas Electronics' discrete power transistor portfolio, specifically within their N-Channel MOSFET lineup. It complements other power devices like the RJK1001DPP-A0, offering similar voltage ratings but differing in current capacity and package type. The product is categorized under general-purpose power switching components used in embedded and industrial control systems.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers' equivalents.

RJK1003DPN-A0#T2RJK1003DPN-A0#T2

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