RJK1576DPA-00#J5A

Single FETs, MOSFETs Overview

The RJK1576DPA-00#J5A is an N-channel power MOSFET from Renesas Electronics, designed for surface-mount applications. It features a drain-to-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 25 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 58 mΩ. Packaged in the WPAK(3F) SON-8 format with dimensions of 5x6 mm, it offers high-density installation capabilities suitable for automotive and industrial power systems.

Single FETs, MOSFETs Feature Summary

• N-channel silicon MOSFET technology optimized for low on-resistance
• Capable of handling 150 V drain-to-source voltage and 25 A continuous current
• WPAK(3F) package design facilitates high-density PCB mounting
• Suitable for robust switching applications in motor drives and load switches

Single FETs, MOSFETs Applications

• Automotive power management systems
• Motor driver circuits
• General-purpose load switching
• Industrial power conversion

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Renesas distributors or certified partners. Confirm the specific revision level matches your design requirements. Check for RoHS compliance documentation if environmental regulations apply to your assembly process. Ensure proper ESD handling procedures are followed during storage and installation to maintain device integrity.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V rating and 25 A current capacity are required in a compact 5x6 mm footprint. Consider the 58 mΩ on-resistance for thermal management calculations. Evaluate the WPAK(3F) package against available board space constraints. Compare thermal performance characteristics with alternative packages like TOLL if higher heat dissipation is needed.

Single FETs, MOSFETs Part Context

This part belongs to the Renesas power MOSFET portfolio, which includes various voltage and current ratings. The WPAK series is engineered for automotive-grade reliability and high-density surface mount applications. It complements other Renesas discrete devices used in complex power electronics designs requiring efficient switching and robust performance under varying thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 150 V, 25 A N-channel MOSFETs in similar SON-8 or WPAK packages. Verify pin compatibility and electrical parameters such as Rds(on) and gate charge before substitution. Consult Renesas documentation for recommended replacement strategies or updated product line recommendations.