RQ7G080BGTCR

Single FETs, MOSFETs Overview

The RQ7G080BGTCR is a single N-channel power MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a TSMT-8 package with dimensions of 2.8x3.0 mm and a thickness of 0.85 mm. The device supports a drain-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 8 A. Key electrical parameters include a typical on-resistance (R_DS(on)) of 16.5 mΩ at V_GS = 4.5 V and 12.7 mΩ at V_GS = 10 V. The total gate charge (Q_g) is typically 10.6 nC, with a maximum power dissipation (P_D) of 1.5 W. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Low on-resistance characteristics optimized for efficient switching performance.
• Compact TSMT-8 surface mount package suitable for space-constrained designs.
• Lead-free plating compliant with RoHS directives.

Single FETs, MOSFETs Applications

• General-purpose switching circuits
• Load switch applications
• DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TCRCR against the official datasheet to confirm tape-and-reel packaging specifications. Ensure the component status is listed as Recommended for New Designs rather than Not Recommended for New Designs. Confirm RoHS compliance details directly from the manufacturer's documentation before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required in a small footprint. The 40V rating and 8A current capacity suit low-side switching tasks. Evaluate thermal management requirements given the 1.5W power dissipation limit in the TSMT-8 package. Compare gate charge values against driver capabilities to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the RQ7G series of power MOSFETs from ROHM Semiconductor. The series includes complementary P-channel variants such as the RQ7G080ATTCR. These components are standard-grade devices intended for general electronic equipment, not automotive applications. The TSMT-8 package provides a balance between thermal performance and board space efficiency.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include the RQ7G080ATTCR (P-channel). Cross-family replacements require matching V_DSS, I_D, R_DS(on), and package type. Verify pinout compatibility and thermal resistance characteristics before substituting.