S26KL256SDABHM030

Memory IC Overview

The S26KL256SDABHM030 is a 256-Mb (32-MB) HYPERFLASH™ NOR flash memory device manufactured by Infineon Technologies. It utilizes the HYPERBUS™ interface with an 8-bit data bus and supports DDR transfers at clock rates up to 166 MHz at 1.8 V, achieving sustained read throughput of 333 MBps. The device features a 96-ns initial random read access time and operates within an extended temperature range of -40°C to +125°C. It is housed in a 24-ball FBGA package.

Memory IC Feature Summary

• Supports high-speed sequential burst transactions with configurable wrapped or linear burst lengths for optimized data throughput.
• Includes embedded Error Correction Code (ECC) logic capable of correcting single-bit errors and detecting two-bit errors within half-page units.
• Features hardware-accelerated Cyclic Redundancy Check (CRC) calculation over user-defined address ranges for data integrity verification.
• Provides advanced sector protection mechanisms including both volatile and non-volatile methods for each erase sector.

Memory IC Applications

• Boot code storage in automotive electronic control units requiring AEC-Q100 Grade 1 qualification.
• Firmware storage for industrial controllers operating in extended temperature environments.
• Data logging applications utilizing embedded ECC for enhanced reliability.
• System booting in consumer electronics requiring fast random access times.

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required voltage domain and temperature grade. Confirm the package variant corresponds to the intended PCB footprint. Ensure compatibility with the host system's HYPERBUS controller signals. Validate RoHS compliance status against current regulatory requirements. Cross-reference the manufacturer's latest datasheet revision for any pinout or electrical specification updates.

Memory IC Selection Notes

Select this component when high-speed read performance is critical for system boot times or large data retrieval. Choose this part if the application requires operation in extreme temperatures up to 125°C. Consider this device for designs needing integrated error correction without external processing overhead. Evaluate the 24-ball FBGA package constraints against available board space. Compare power consumption profiles against other NOR flash options for battery-operated systems.

Memory IC Part Context

This device belongs to the HYPERFLASH family, which combines MIRRORBIT technology with the HYPERBUS interface. The family includes various densities and voltage variants. The 'KL' designation typically indicates standard commercial/industrial grades, while 'KS' denotes automotive grades. This specific model represents the 256-Mb density option within the broader portfolio.

Memory IC Replacement Considerations

S26KS256SDABHI030

Memory IC FAQ

How does the DCARS feature improve signal integrity?

DCARS allows independent phase shifting of the RWDS signal relative to the clock inputs, centering the read data strobe within the valid data window to optimize setup and hold times.

What happens if multiple writes occur in the same half-page without an erase?

Programming the same half-page more than once without an intervening erase disables the ECC functionality for that half-page because the ECC syndrome becomes invalid.