S29CD016J0MQFM013

Memory IC Overview

The Infineon S29CD016J0MQFM013 is a 16 Mbit synchronous burst mode NOR flash memory device. It features a 512K x 32-bit organization with a 54 ns access time and operates at frequencies up to 56 MHz. The device utilizes a single 2.5 V to 2.75 V supply voltage and supports simultaneous read/write operations on two independent banks with zero latency. It includes a top boot sector configuration, VersatileI/O support ranging from 1.65 V to 3.6 V, and an extended temperature range of -40 °C to +125 °C. The component is housed in an 80-pin PQFP package.

Memory IC Feature Summary

• Simultaneous Read/Write capability allowing concurrent operations on separate banks without latency
• Dual Boot Sector Configuration providing flexible top or bottom boot block options
• VersatileI/O control supporting input/output voltages from 1.65 V to 3.6 V
• Advanced Sector Protection utilizing persistent bits, password methods, and hardware write protect

Memory IC Applications

• Automotive engine control units requiring high reliability
• Industrial embedded systems needing extended temperature operation
• Boot code storage for microcontrollers with top boot sector requirements
• Data logging applications benefiting from simultaneous read/write performance

Memory IC Procurement Notes

Verify the specific ordering suffix matches the required package type, temperature grade, and boot sector configuration. Confirm that the 56 MHz speed bin aligns with system timing requirements. Ensure compatibility with the 2.5 V supply voltage domain. Check for lead-free material set availability if environmental compliance is mandatory. Validate autoselect ID options against existing firmware implementations.

Memory IC Selection Notes

Select this component when a 16 Mbit density with a 32-bit data bus is required for automotive or industrial environments. The simultaneous read/write feature is critical for applications demanding continuous code execution during background programming. The extended temperature range ensures functionality in harsh conditions. Verify that the 54 ns access time meets the processor's clock cycle constraints. Consider the VersatileI/O flexibility for interfacing with varying logic levels.

Memory IC Part Context

This device belongs to the S29CD-J series of burst-mode Flash memories fabricated using 110 nm floating gate technology. It is designed for demanding automotive applications, offering robust performance and reliability. The series supports JEDEC command sets and Common Flash Interface (CFI) standards. It provides flexible sector architectures and secured silicon regions for secure data storage.

Memory IC Replacement Considerations

S29CD016J0MQAM013

Memory IC FAQ

Does the S29CD016J0MQFM013 support simultaneous read and write operations?

Yes, the device supports simultaneous read and write operations on two separate banks with zero latency using separate data and address pins.

What is the supported voltage range for the VersatileI/O pins?

The VersatileI/O control supports input/output voltages ranging from 1.65 V to 3.6 V.

Is there hardware protection for specific sectors?

Yes, the WP# pin provides hardware protection for the two outermost sectors in the large bank, preventing program and erase functions.