S29GL128S10TFV023

Memory IC Overview

The S29GL128S10TFV023 is a 128 Mbit parallel NOR flash memory from the GL-S family, utilizing 65-nm MIRRORBIT Eclipse technology. It features a 16-bit data bus and operates on a single 2.7 V to 3.6 V supply. The device supports asynchronous reads with a maximum random access time of 100 ns and page access times as fast as 15 ns. It includes a 512-byte write buffer for efficient programming and integrates internal hardware ECC for single-bit error correction. The component is housed in a 64-ball LAA Fortified BGA package (13 mm × 11 mm) and is rated for industrial temperatures ranging from -40°C to +85°C.

Memory IC Feature Summary

• Supports Versatile I/O with a wide voltage range from 1.65 V to VCC
• Integrates a 512-byte write buffer to accelerate effective programming speeds
• Features Advanced Sector Protection (ASP) with both volatile and non-volatile methods
• Includes a separate 1024-byte One Time Programmable (OTP) array

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems needing Execute-In-Place (XIP) capabilities combined with data storage
• Industrial environments requiring robust sector protection and reliability

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required package type and temperature grade. Confirm that the Versatile I/O configuration aligns with the target system's I/O voltage levels. Ensure that the industrial temperature range meets the operational requirements of the final application environment.

Memory IC Selection Notes

Select this component when a 128 Mbit capacity with a 16-bit interface is required. Consider the 100 ns random access speed for systems needing faster initial data retrieval. Evaluate the need for the integrated ECC feature if data integrity is critical without external processing overhead.

Memory IC Part Context

This part belongs to the GL-S family of 3.0 V core flash memories, which also includes densities up to 1 Gb. The GL-S series is designed to combine the fast random access of XIP flash with the high density of data storage flash. It utilizes advanced 65-nm process technology to achieve performance improvements over previous generations.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.