Memory IC S29GL256S10TFB010 product image

S29GL256S10TFB010

$6.60
  • Description:IC FLASH 256MBIT PARALLEL 56TSOP
  • Series:GL-S
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:fd43c1fa1cbc Category: Brand:

  
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S29GL256S10TFB010 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 256MBIT PARALLEL 56TSOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL256S10TFB010

  • Description:IC FLASH 256MBIT PARALLEL 56TSOP
  • Series:GL-S
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:256Mbit
  • Memory Organization:16M x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:60ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 105°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:56-TSOP
  • Access Time:100 ns
  • Grade:Automotive
  • Qualification:AEC-Q100

Memory IC datasheet and documents for S29GL256S10TFB010

S29GL256S10TFB010

Memory IC Overview

The S29GL256S10TFB010 is a 256 Mbit (32 MByte) parallel NOR flash memory from the Infineon GL-S family, utilizing 65-nm MirrorBit Eclipse technology. It features a 16-bit data bus and supports asynchronous read operations with a maximum random access time of 100 ns and page access time of 15 ns. The device operates on a single 3.0 V supply (2.7 V to 3.6 V) with versatile I/O capabilities ranging from 1.65 V to VCC. It includes a 512-byte write buffer for efficient programming and integrates hardware-based automatic error correction (ECC).

Memory IC Feature Summary

  • Supports Versatile I/O allowing flexible voltage levels between 1.65 V and VCC.
  • Integrates internal hardware Automatic Error Correction (ECC) for single-bit error correction during initial access.
  • Features Advanced Sector Protection (ASP) providing both volatile and non-volatile sector locking methods.

Memory IC Applications

  • Embedded applications requiring high density and fast performance.
  • Systems needing Execute-In-Place (XIP) capabilities combined with data storage.
  • Industrial and automotive environments operating within specified temperature grades.

Memory IC Procurement Notes

Verify the specific ordering suffix against the official Infineon datasheet to confirm package type, temperature grade, and RoHS compliance. Ensure the selected variant matches the required interface timing and voltage specifications for the target system design.

Memory IC Selection Notes

Select this component for designs requiring 256 Mbit capacity with a 16-bit parallel interface. Consider the 100 ns access speed and 512-byte write buffer for performance optimization. Verify that the host system supports the asynchronous command set and Versatile I/O requirements.

Memory IC Part Context

This part belongs to the S29GL-S family of MirrorBit flash memories. It shares architectural features with other densities in the series, such as uniform 128-kbyte sectors and similar command sets, but differs in address mapping and total array size.

Memory IC Replacement Considerations

Check for direct pin-compatible alternatives within the S29GL-S family with different access speeds or packages. Verify compatibility with existing firmware drivers when substituting with other densities or interface types.

S29GL256S10TFB010S29GL256S10TFB010
$6.60
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