SBR30A100CTFP

Diode Arrays Overview

The SBR30A100CTFP is a Super Barrier Rectifier diode manufactured by Diodes Incorporated, housed in an ITO-220AB package. It features a dual anode common cathode configuration with a peak repetitive reverse voltage of 100 V and a total average rectified output current of 30 A (15 A per leg). The maximum forward voltage drop is 0.8 V at +25°C, while the maximum reverse leakage current is 0.1 mA at +25°C. Non-repetitive peak forward surge current reaches 250 A, and the operating junction temperature range spans from -65°C to +175°C.

Diode Arrays Feature Summary

• Patented Super Barrier Rectifier technology provides superior avalanche capability compared to standard Schottky diodes for improved ruggedness.
• Ultra-low forward voltage drop reduces power dissipation, enhancing efficiency and enabling cooler operation.
• Stable high-temperature reverse leakage characteristics increase reliability against thermal runaway during elevated temperature operation.

Diode Arrays Applications

• DC-DC Converters
• AC-DC Adaptors

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the exact package type and environmental compliance status. Confirm that the component meets RoHS directives and halogen-free requirements if mandated by your design specifications. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Cross-reference the marking code on the physical device against the datasheet documentation to validate the part number and date code upon receipt.

Diode Arrays Selection Notes

Select this component when low forward voltage drop and high-temperature stability are critical for system efficiency. The ITO-220AB package is suitable for through-hole mounting applications requiring robust heat dissipation. Consider the 100 V reverse voltage rating and 30 A total current capacity to ensure adequate headroom for the intended circuit load conditions.

Diode Arrays Part Context

This component belongs to the SBR30A series of Super Barrier Rectifiers from Diodes Incorporated. It utilizes patented SBR technology to combine the low forward voltage of Schottky diodes with the high-temperature stability of silicon rectifiers. The series is designed to offer better performance than traditional Schottky devices in terms of avalanche ruggedness and leakage current control.

Diode Arrays Replacement Considerations

SBR30A100CTB-13

Diode Arrays FAQ

What is the isolation voltage specification for the ITO-220AB package?

The ITO-220AB package offers an isolation voltage of 2,000 VAC from terminal to heatsink over a duration of 3 seconds.

How does the SBR technology compare to standard Schottky diodes regarding avalanche capability?

Patented SBR technology provides superior avalanche capability versus standard Schottky diodes, ensuring more rugged and reliable end applications.

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 250 A for an 8.3 ms single half sine-wave superimposed on rated load.