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SBR40U100CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE ARRAY SBR 100V 40A TO220-3. Review the specifications below when checking this part for your BOM.
The SBR40U100CT is a Super Barrier Rectifier featuring dual anode common cathode configuration in a TO-220AB package. It supports a peak repetitive reverse voltage of 100 V and an average rectified output current of 40 A at 150°C case temperature. The device exhibits a forward voltage drop ranging from 0.60 V to 0.72 V at 20 A, with a non-repetitive peak forward surge current capability of 235 A. Thermal resistance junction-to-case is 2 °C/W per leg, and the operating junction temperature range spans -65°C to +150°C.
Verify component authenticity by checking the marking code format on the package against official documentation standards. Confirm RoHS compliance status through manufacturer declarations as required by regional regulations. Ensure thermal management design accounts for the specified thermal resistance values to maintain safe operating temperatures during continuous operation.
Select this component when low forward voltage drop and high temperature stability are critical requirements. The TO-220AB package suits through-hole mounting applications requiring robust mechanical connections. Consider the 100 V reverse voltage rating and 40 A current capacity to ensure adequate headroom for specific circuit loads and transient conditions.
This part belongs to Diodes Incorporated's SBR series, utilizing patented Super Barrier Rectifier technology. It combines the low forward voltage characteristics of Schottky diodes with the high temperature stability and low leakage current typical of silicon PN junctions. The series targets high-efficiency power supply designs.
SBR40U100CT-G serves as a verified alternative within the same product family, differing only in molding compound specifications while maintaining identical electrical and mechanical parameters.
The maximum operating junction temperature is +150°C.
The device features a dual anode common cathode configuration.
The typical thermal resistance junction-to-case is 2 °C/W per leg.
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