SCS230AE2C

Diode Arrays Overview

The SCS230AE2C is a silicon carbide Schottky barrier diode manufactured by ROHM Semiconductor. It features a dual configuration housed in a TO-247-3 through-hole package. The device supports a continuous forward current of 40 A and a repetitive reverse voltage of 650 V. Key electrical parameters include a maximum forward voltage of 1.35 V, a peak non-repetitive forward surge current of 140 A, and a maximum reverse leakage current of 4 uA. It operates within a junction temperature range of -55°C to +175°C with a total power dissipation capacity of 270 W.

Diode Arrays Feature Summary

• Utilizes silicon carbide material for high thermal stability and low switching losses.
• Dual configuration allows for efficient circuit integration in bridge or synchronous rectifier topologies.
• Designed for high-speed switching applications with reduced temperature dependence.

Diode Arrays Applications

• High-efficiency AC/DC and DC/DC converters
• Uninterruptible power supply (UPS) systems
• Industrial motor drives and inverters

Diode Arrays Procurement Notes

Verify the specific suffix 'E2C' against official ROHM documentation to confirm pinout and electrical specifications, as variations exist within the SCS2x series. Confirm RoHS compliance status via the manufacturer's datasheet before integration. Ensure the TO-247-3 package dimensions match your PCB footprint requirements. Check for end-of-life notifications or obsolescence warnings directly from the supplier or manufacturer channels prior to finalizing procurement decisions.

Diode Arrays Selection Notes

Select this component when a dual SiC Schottky diode with 650V rating and 40A continuous current capability is required. The TO-247-3 package suits high-power through-hole designs. Compare forward voltage and thermal resistance against single-diode alternatives if space permits. Ensure the application environment stays within the specified -55°C to +175°C operating temperature range for optimal performance and reliability.

Diode Arrays Part Context

This part belongs to the ROHM SCS2x series of silicon carbide Schottky barrier diodes. These devices are engineered for high-voltage, high-frequency power conversion applications. The series leverages ROHM's second-generation SiC technology to achieve superior efficiency compared to traditional silicon counterparts. The SCS230AE2C specifically targets industrial and automotive-grade power supplies requiring robust thermal management and fast switching characteristics.

Diode Arrays Replacement Considerations

SCS240AE2C: Higher current rating (40A vs 30A implied by naming convention, verify datasheet), same package. SCS220AEC: Lower current rating (20A), single configuration. Verify exact electrical parameters and pin compatibility before substitution.