SCT3030ALHRC11

Single FETs, MOSFETs Overview

The SCT3030ALHRC11 is a third-generation N-channel Silicon Carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It features a trench gate structure designed to reduce on-resistance compared to planar types. Key electrical parameters include a drain-source voltage of 650 V, a continuous drain current of 70 A at case temperature, and a maximum power dissipation of 262 W. The device exhibits a typical on-state resistance of 30 mΩ and a gate charge of 104 nC. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247N package.

Single FETs, MOSFETs Feature Summary

• Utilizes a third-generation trench gate structure for reduced on-resistance relative to planar SiC-MOSFETs.
• Certified to AEC-Q101 automotive grade standards for reliability.
• Designed for fast switching speeds and easy paralleling capabilities.

Single FETs, MOSFETs Applications

• Solar power generation conditioners
• Industrial equipment power supplies
• Industrial inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'C11' against official ROHM documentation to confirm tube packaging and automotive qualification status. Ensure the component matches the standard grade specifications rather than alternative grades. Cross-reference the datasheet revision date to validate parameter accuracy before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency applications requiring robust thermal performance up to 175°C. The low on-resistance minimizes conduction losses in power conversion circuits. Consider the 650V rating for medium-voltage systems where silicon carbide advantages are critical for efficiency and size reduction.

Single FETs, MOSFETs Part Context

This part belongs to the SCT3x series of automotive-grade SiC MOSFETs from ROHM. It represents an evolution in trench technology aimed at improving power density. The series is specifically engineered to address the demands of modern electric and industrial power electronics with enhanced thermal stability.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other ROHM SCT3030 variants with different voltage ratings or packages, such as SCT3030KLHRC11 for higher voltage requirements. Verify pin compatibility and thermal characteristics when considering cross-series replacements.