SCT3080ALHRC11

Single FETs, MOSFETs Overview

The SCT3080ALHRC11 is a third-generation N-channel Silicon Carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It features a trench gate structure designed to reduce on-resistance compared to planar devices. The component operates with a drain-source voltage of 650V and supports a continuous drain current of 30A. Key electrical parameters include a typical drain-source on-state resistance of 80mΩ, a gate charge of 48nC, and a threshold voltage of 5.6V. It is housed in a TO-247N-3 package with a maximum power dissipation of 134W and a junction temperature rating up to +175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes a trench gate structure for significantly lower on-resistance compared to planar SiC-MOSFETs.
• Fast switching speed and fast reverse recovery characteristics suitable for high-frequency applications.
• Qualified to AEC-Q101 standards for automotive grade reliability.
• Easy to parallel and simple to drive due to optimized gate charge characteristics.

Single FETs, MOSFETs Applications

• Power conditioners for solar power generation systems
• Power supplies for industrial equipment
• Industrial inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix C11 indicates the tube packaging format containing 450 units per tube. Confirm the device meets AEC-Q101 automotive qualification requirements if intended for automotive-grade designs. Ensure the TO-247N-3 lead pitch matches the target PCB footprint. Check for RoHS compliance and REACH SVHC status against current regulatory lists before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance 650V SiC MOSFET is required for high-efficiency power conversion. The 80mΩ typical Rds(on) offers improved performance over higher resistance alternatives. Consider the TO-247N-3 package for through-hole mounting solutions requiring robust thermal management. The AEC-Q101 qualification makes it suitable for demanding automotive or industrial environments where long-term reliability is critical.

Single FETs, MOSFETs Part Context

This part belongs to the SCT3080AL series of third-generation SiC MOSFETs from ROHM. It shares the same core die technology as other variants in the series but differs in packaging and terminal configuration. The ALHRC11 designation specifically identifies the TO-247N-3 through-hole package variant within the broader product family.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same package are limited. Verify if other ROHM parts like SCT3060ALHRC11 meet the current requirements, noting its higher 39A rating. Cross-manufacturer equivalents require careful verification of Rds(on), Qg, and thermal characteristics.