Single FETs, MOSFETs SI2308BDS-T1-BE3 product image

SI2308BDS-T1-BE3

$0.69
  • Description:N-CHANNEL 60-V (D-S) MOSFET
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:a6f709511de1 Category: Brand:

  
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SI2308BDS-T1-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 60-V (D-S) MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI2308BDS-T1-BE3

  • Description:N-CHANNEL 60-V (D-S) MOSFET
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:1.9A (Ta), 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:156mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):1.09W (Ta), 1.66W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SI2308BDS-T1-BE3

SI2308BDS-T1-BE3

Single FETs, MOSFETs Overview

The SI2308BDS-T1-BE3 is a single N-channel enhancement mode MOSFET manufactured by Vishay / Siliconix. It utilizes TrenchFET technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 2.3 A. Its maximum on-resistance is 156 mOhms, with a gate-source threshold voltage of 3 V and a total gate charge of 2.3 nC. Power dissipation reaches 1.66 W, operating within a temperature range of -55 C to +150 C.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration utilizing TrenchFET technology for enhanced performance.

Single FETs, MOSFETs Applications

    Single FETs, MOSFETs Procurement Notes

    Verify the active status of this component before integration into designs. Official records indicate that the SI2308BDS-T1-BE3 has reached end-of-life or discontinuation status. Confirm availability through authorized distributors or consider alternative sourcing channels if procurement is required for production purposes.

    Single FETs, MOSFETs Selection Notes

    Select this part only if the specific 60 V rating and 2.3 A current capacity align with circuit requirements. Note that the component is discontinued; evaluate replacement options early in the design phase to ensure long-term supply stability and avoid obsolescence risks during manufacturing.

    Single FETs, MOSFETs Part Context

    This component belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the MOSFET category. It represents a legacy product line designed for general-purpose switching applications in compact surface-mount environments, now marked as obsolete in official catalogs.

    Single FETs, MOSFETs Replacement Considerations

    Public confirmed substitute part numbers: SI2308CDS-T1-GE3

    SI2308BDS-T1-BE3SI2308BDS-T1-BE3
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