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SI2308BDS-T1-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 60-V (D-S) MOSFET. Review the specifications below when checking this part for your BOM.
The SI2308BDS-T1-BE3 is a single N-channel enhancement mode MOSFET manufactured by Vishay / Siliconix. It utilizes TrenchFET technology and is housed in an SOT-23-3 surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current of 2.3 A. Its maximum on-resistance is 156 mOhms, with a gate-source threshold voltage of 3 V and a total gate charge of 2.3 nC. Power dissipation reaches 1.66 W, operating within a temperature range of -55 C to +150 C.
Verify the active status of this component before integration into designs. Official records indicate that the SI2308BDS-T1-BE3 has reached end-of-life or discontinuation status. Confirm availability through authorized distributors or consider alternative sourcing channels if procurement is required for production purposes.
Select this part only if the specific 60 V rating and 2.3 A current capacity align with circuit requirements. Note that the component is discontinued; evaluate replacement options early in the design phase to ensure long-term supply stability and avoid obsolescence risks during manufacturing.
This component belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the MOSFET category. It represents a legacy product line designed for general-purpose switching applications in compact surface-mount environments, now marked as obsolete in official catalogs.
Public confirmed substitute part numbers: SI2308CDS-T1-GE3
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