SI3139KL3C-TP

Single FETs, MOSFETs Overview

The SI3139KL3C-TP is a P-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes Trench LV technology and is housed in a DFN1006-3 package. The device supports a drain-source voltage of -20 V and a continuous drain current of -0.5 A. Key electrical parameters include a maximum on-resistance of 1200 mΩ at VGS=-2.5V and ID=-300mA, and a gate threshold voltage ranging from -0.35 V to -1.2 V. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench LV MOSFET technology for optimized performance.
• Features ESD protection rated up to 2KV under HBM standards.
• Constructed as a halogen-free "Green" device with UL 94 V-0 flammability rating epoxy.

Single FETs, MOSFETs Applications

• Power management circuits
• Battery protection systems
• Load switch applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix "-TP" indicates RoHS compliance when sourcing. Confirm the package type corresponds to DFN1006-3 rather than other variants like SOT-723. Ensure procurement channels are authorized distributors to guarantee part authenticity and traceability. Check datasheet revision dates for any potential specification updates.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage P-channel switching requirements where a compact footprint is necessary. The DFN1006-3 package offers space efficiency compared to larger surface-mount options. Consider the thermal resistance characteristics for heat dissipation needs in still air environments. Verify that the required gate drive voltage aligns with the specified on-resistance thresholds.

Single FETs, MOSFETs Part Context

This component belongs to the SI3139KL3C series of P-channel MOSFETs produced by MCC. It is distinct from similar models such as the SI3139K-TP, which utilizes an SOT-723 package. The KL3C designation specifically identifies the DFN1006-3 form factor. This series is designed for general-purpose switching applications requiring small signal or power transistor capabilities.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the DFN1006-3 package and P-channel configuration. Verify pinout compatibility between Gate, Source, and Drain terminals. Electrical ratings for voltage and current must meet or exceed the original specifications to ensure circuit reliability.