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SI3447BDV-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 12V 4.5A 6TSOP. Review the specifications below when checking this part for your BOM.
The SI3447BDV-T1-E3 is a P-Channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a drain-source voltage (Vds) of 12 V and a continuous drain current (Id) of 4.5 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 95 mΩ at a gate-source voltage (Vgs) of -4.5 V. It operates within an ambient temperature range up to 85°C and is housed in a surface-mount TSOP-6 package.
Verify the specific suffix 'E3' confirms halogen-free compliance and lead-free termination status as per Vishay standards. Confirm the TSOP-6 package orientation and pinout match the design schematic. Ensure the 12 V rating provides sufficient headroom for the target application's supply voltage. Check for obsolescence notices or recommended alternative part numbers from the manufacturer.
Select this component when a compact P-Channel solution is required for 12 V systems. The 95 mΩ Rds(on) offers efficiency benefits over higher resistance alternatives. The TSOP-6 package suits space-constrained designs. Verify that the 4.5 A current rating meets peak load requirements without exceeding thermal limits.
This part belongs to the SI34 series of single N- and P-Channel MOSFETs from Vishay Siliconix. These devices are engineered for general-purpose power switching applications requiring small outline packages. The series emphasizes low on-resistance and fast switching speeds suitable for portable and battery-powered electronics.
Consult official Vishay documentation for direct replacements. Cross-reference parameters such as Vds, Id, and Rds(on) carefully. Ensure pin compatibility if substituting within the same package family.
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