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SI3460BDV-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 8A 6TSOP. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SI3460BDV-T1-E3 is a single N-Channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and an 8 A continuous drain current capacity in a TSOP-6 surface-mount package. The device exhibits a maximum on-state resistance of 0.027 Ω at VGS = 4.5 V, with a typical total gate charge of 9 nC. It operates within a junction temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the component matches the required thermal and electrical specifications for the target application environment before finalizing procurement decisions.
Select this component for low-voltage switching applications requiring high efficiency and compact packaging. Evaluate the thermal resistance characteristics and ensure adequate heat dissipation paths are designed into the PCB layout to maintain safe operating temperatures under load conditions.
This part belongs to the Vishay Siliconix SI3460BDV series of N-Channel MOSFETs. It is manufactured using silicon technology and is housed in a TSOP-6 package. The product line is designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical requirements.
Si3460BDV-T1-GE3
The absolute maximum gate-source voltage (VGS) rating is ±8 V.
Yes, the device supports an operating junction and storage temperature range from -55 °C to +150 °C.
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