Single FETs, MOSFETs SI3460BDV-T1-E3 product image

SI3460BDV-T1-E3

$1.10
  • Description:MOSFET N-CH 20V 8A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9272ec0ebbb7 Category: Brand:

  
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SI3460BDV-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 8A 6TSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI3460BDV-T1-E3

  • Description:MOSFET N-CH 20V 8A 6TSOP
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:27mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 8 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 3.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-TSOP
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for SI3460BDV-T1-E3

SI3460BDV-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI3460BDV-T1-E3 is a single N-Channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and an 8 A continuous drain current capacity in a TSOP-6 surface-mount package. The device exhibits a maximum on-state resistance of 0.027 Ω at VGS = 4.5 V, with a typical total gate charge of 9 nC. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • TrenchFET power MOSFET structure for optimized performance
  • Halogen-free construction compliant with IEC 61249-2-21
  • RoHS Directive 2002/95/EC compliant

Single FETs, MOSFETs Applications

  • Load switch for portable applications
  • Load switch for low voltage bus

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and halogen-free compliance. Confirm that the component matches the required thermal and electrical specifications for the target application environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage switching applications requiring high efficiency and compact packaging. Evaluate the thermal resistance characteristics and ensure adequate heat dissipation paths are designed into the PCB layout to maintain safe operating temperatures under load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI3460BDV series of N-Channel MOSFETs. It is manufactured using silicon technology and is housed in a TSOP-6 package. The product line is designed for general-purpose switching applications where low on-resistance and fast switching speeds are critical requirements.

Single FETs, MOSFETs Replacement Considerations

Si3460BDV-T1-GE3

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGS) rating is ±8 V.

Is the device suitable for high-temperature environments?

Yes, the device supports an operating junction and storage temperature range from -55 °C to +150 °C.

SI3460BDV-T1-E3SI3460BDV-T1-E3
$1.10
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