SI4155DY-T1-GE3

$1.00

Description：P-CHANNEL 30-V (D-S) MOSFET SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0ee61c46a194 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SI4155DY-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is P-CHANNEL 30-V (D-S) MOSFET SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4155DY-T1-GE3

Description：P-CHANNEL 30-V (D-S) MOSFET SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.2A (Ta), 13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1870 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 4.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4155DY-T1-GE3

SI4155DY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4155DY-T1-GE3 is a single P-channel power MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage rating and a maximum on-resistance of 0.026 Ω at VGS = -4.5 V. The device supports a continuous drain current of -10.2 A at TA = 25 °C and handles up to -13.6 A at TC = 25 °C. Packaged in an SO-8 surface-mount footprint, it operates within a junction temperature range of -50 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
100% gate resistance and unclamped inductive switching tested

Single FETs, MOSFETs Applications

Notebook computers and mobile computing
Adaptor switch / load switch
Battery management
Power management

Single FETs, MOSFETs Procurement Notes

Verify the component against official Vishay datasheet document number 63183 to confirm technical specifications. Ensure the ordering suffix matches the required package and lead-free compliance standards. Validate that the supplier provides traceability documentation consistent with manufacturer requirements for this specific part number.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a single P-channel configuration with low on-resistance characteristics. Consider the thermal resistance ratings when designing heat dissipation strategies. Verify that the gate drive voltage levels align with the specified thresholds for optimal switching performance.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. It is designed for high-efficiency switching applications in portable electronics. The SO-8 package facilitates surface mounting on standard printed circuit boards used in consumer devices.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume compatibility based solely on package similarity or generic electrical parameters.