SI4418DY-T1-E3

$1.92

Description：MOSFET N-CH 200V 2.3A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:649817010983 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4418DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 2.3A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4418DY-T1-E3

Description：MOSFET N-CH 200V 2.3A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4418DY-T1-E3

SI4418DY-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix Si4418DY is an N-Channel Power MOSFET utilizing TrenchFET technology, housed in a surface-mount SO-8 package. It features a drain-source voltage rating of 200 V and a continuous drain current of 3 A at 25 °C. The device exhibits a maximum on-state resistance of 0.130 Ω at VGS = 10 V and 0.142 Ω at VGS = 6.0 V. Thermal performance includes a junction-to-ambient resistance of 71 °C/W under steady-state conditions.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
Halogen-free construction per IEC 61249-2-21
100% gate resistance tested

Single FETs, MOSFETs Applications

Primary side switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The Si4418DY-T1-E3 variant is lead-free, while the Si4418DY-T1-GE3 variant is both lead-free and halogen-free. Confirm that the selected version matches the environmental specifications required for the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage isolation up to 200 V with moderate current handling capabilities. Ensure the thermal design accommodates the specified junction-to-ambient resistance values. Validate that the gate drive voltage meets the minimum threshold for optimal on-state resistance performance.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix Si44 series of N-Channel MOSFETs. It is designed for general-purpose power switching applications where compact surface-mount packaging and robust electrical characteristics are necessary. The SO-8 package facilitates efficient heat dissipation through the drain foot.