SI4425BDY-T1-E3

$1.56

Description：MOSFET P-CH 30V 8.8A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b51f1d2e9bf9 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4425BDY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 8.8A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4425BDY-T1-E3

Description：MOSFET P-CH 30V 8.8A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4425BDY-T1-E3

SI4425BDY-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4425BDY-T1-E3 is a P-Channel MOSFET utilizing TrenchFET technology. It features a drain-source voltage of -30 V and a continuous drain current of -11.4 A at 25 °C. The on-state resistance is 0.012 Ω at VGS = -10 V and -11.4 A, or 0.019 Ω at VGS = -4.5 V and -9.1 A. Total gate charge is typically 100 nC. The device operates within a junction temperature range of -55 to 150 °C and dissipates up to 2.5 W at 25 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Power MOSFET structure for advanced high cell density
Halogen-free construction compliant with IEC 61249-2-21 definition
Lead (Pb)-free packaging compliant with RoHS Directive 2002/95/EC

Single FETs, MOSFETs Applications

Load switches for notebook PCs
Load switches for desktop PCs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The -E3 suffix indicates lead-free status, while -GE3 denotes both lead-free and halogen-free attributes. Confirm package type and thermal characteristics match the target PCB layout before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component based on its low on-resistance and high current handling capabilities in an SO-8 package. Evaluate thermal management requirements against the specified maximum power dissipation and thermal resistance ratings. Ensure gate drive voltages align with the threshold and on-state resistance specifications for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI44 series of P-Channel MOSFETs. It utilizes the TrenchFET generation process to achieve high cell density. The device is designed for surface mount applications, specifically targeting load switch implementations in portable and desktop computing environments.