Single FETs, MOSFETs SI7465DP-T1-GE3 product image

SI7465DP-T1-GE3

$0.94
  • Description:MOSFET P-CH 60V 3.2A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e312b509c428 Category: Brand:

  
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SI7465DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 3.2A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7465DP-T1-GE3

  • Description:MOSFET P-CH 60V 3.2A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:64mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7465DP-T1-GE3

SI7465DP-T1-GE3

Single FETs, MOSFETs Overview

The SI7465DP-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, rated for a drain-source voltage of -60 V. It features a maximum on-state resistance of 0.080 Ω at VGS = -4.5 V and 0.064 Ω at VGS = -10 V. The device supports a continuous drain current of -3.2 A at TA = 25 °C and handles a pulsed drain current of -25 A. Total gate charge is typically 26 nC. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK SO-8 package with a profile height of approximately 1.07 mm.

Single FETs, MOSFETs Feature Summary

  • TrenchFET power MOSFET technology
  • Leadless PowerPAK SO-8 package design
  • Low thermal resistance construction

Single FETs, MOSFETs Applications

  • Power switching circuits
  • Load switch applications
  • DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance status before procurement. Confirm that the component is sourced from an authorized Vishay distributor to ensure authenticity. Validate that the package marking matches the official datasheet specifications. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for P-channel switching applications. The PowerPAK SO-8 footprint allows direct substitution for standard SO-8 packages while offering superior thermal dissipation characteristics. Evaluate the thermal resistance ratings against the specific PCB copper area available for heat spreading to ensure adequate junction temperature management under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix TrenchFET family, which utilizes advanced planar trench gate technology. The PowerPAK SO-8 package provides a compact form factor comparable to standard SO-8 dimensions but accommodates a larger die size similar to DPAK packages. This architecture enables higher current handling capabilities within a minimal board space constraint.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements include other Vishay P-channel MOSFETs in the PowerPAK SO-8 package, such as the SI7446DP or SI7456DP, provided their voltage and current ratings meet or exceed the system requirements.

SI7465DP-T1-GE3SI7465DP-T1-GE3
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