Single FETs, MOSFETs SI7485DP-T1-E3 product image

SI7485DP-T1-E3

  • Description:MOSFET P-CH 20V 12.5A PPAK SO-8
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Cut Tape (CT)

SKU:7f26f5aa5be8 Category: Brand:

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SI7485DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 12.5A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7485DP-T1-E3

  • Description:MOSFET P-CH 20V 12.5A PPAK SO-8
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:7.3mOhm @ 20A, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 5 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7485DP-T1-E3

SI7485DP-T1-E3

Single FETs, MOSFETs Overview

The SI7485DP-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-SO-8 surface-mount package. The device features a drain-source voltage of 20 V and a continuous drain current of 20 A. Key electrical parameters include an on-resistance of 6.5 mOhms at 10V gate drive, a gate charge of 19 nC, and a power dissipation rating of 5 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

  • Dual N-channel configuration for space-efficient circuit designs
  • TrenchFET technology for optimized performance characteristics
  • PowerPAK-SO-8 surface-mount packaging

Single FETs, MOSFETs Applications

  • Low voltage DC-to-DC converters
  • Load switches
  • Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E3 confirms RoHS compliance status through official Vishay documentation before procurement. Confirm the exact package variant matches design requirements. Check current lifecycle status as distribution availability may vary. Ensure thermal management aligns with the specified power dissipation limits under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low voltage switching with high current capacity in a compact footprint. Compare on-resistance and gate charge values against system efficiency targets. Verify that the 20V rating provides sufficient margin for the target supply voltage. Consider the dual channel layout benefits for synchronous rectification or bridge configurations.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SI7 series of TrenchFET MOSFETs. These devices are designed for general-purpose low-voltage switching applications. The PowerPAK-SO-8 package offers improved thermal performance compared to standard SO-8 packages. The series emphasizes low on-resistance and fast switching speeds.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay datasheets for direct pin-compatible alternatives within the SI74xx series. Verify that any substitute maintains identical voltage, current, and thermal ratings. Cross-reference package dimensions and electrical characteristics to ensure circuit compatibility.

SI7485DP-T1-E3SI7485DP-T1-E3

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